Strain relaxation in Ge microcrystals studied by
high-resolution X-ray diffraction

J 2016

Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction

ROZBOŘIL, Jakub, Mojmír MEDUŇA, Claudiu Valentin FALUB, Fabio ISA, Hans VON KÄNEL et. al.

Basic information

Original name

Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction

Name in Czech

Relaxace pnutí v Ge mikrokrystalech studovaných pomocí rtg difrakce s vysokým rozlišením

Authors

ROZBOŘIL, Jakub (203 Czech Republic, guarantor, belonging to the institution), Mojmír MEDUŇA (203 Czech Republic, belonging to the institution), Claudiu Valentin FALUB (642 Romania), Fabio ISA (380 Italy) and Hans VON KÄNEL (756 Switzerland)

Edition

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, WEINHEIM, Wiley, 2016, 1862-6300

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Germany

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 1.775

RIV identification code

RIV/00216224:14740/16:00089508

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1002/pssa.201532643

UT WoS

000370188700038

Keywords (in Czech)

defekty krystalů; Ge mikrokrystaly; vzorkovaný Si substrátů rtg difrakce

Keywords in English

crystal defects; Ge microcrystals; patterned Si substrate; X-ray diffraction

Abstract

V originále

Deposition on patterned substrates is a promising method for obtaining high quality, strain and defect free heteroepitaxial layers. In this paper we investigate the crystalline structure of quasi-continuous Ge layers consisting of closely spaced microcrystals on a Si substrate patterned in the form of a regular net of lithographically defined squared based pillars. Lattice parameters, strain and degree of relaxation of the Ge microcrystals are measured by standard high-resolution X-ray diffraction using reciprocal space mapping. In particular, we focus on the impact of Si pillar size and spacing on the Ge crystal quality by analyzing how the bending of crystal lattice planes caused by thermal stress relaxation and random crystal tilts affect the width of the diffraction peaks.

Links

CZ.1.07/2.4.00/17.0006, interní kód MU

Name: Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery

Investor: Ministry of Education, Youth and Sports of the CR, 2.4 Partnership and networks

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

EE2.3.20.0027, research and development project

Name: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií

LM2011020, research and development project

Name: CEITEC ? open access

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

ROZBOŘIL, Jakub, Mojmír MEDUŇA, Claudiu Valentin FALUB, Fabio ISA and Hans VON KÄNEL. Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. WEINHEIM: Wiley, 2016, vol. 213, No 2, p. 463-469. ISSN 1862-6300. Available from: https://dx.doi.org/10.1002/pssa.201532643.

@article{1338601,
   author = {Rozbořil, Jakub and Meduňa, Mojmír and Falub, Claudiu Valentin and Isa, Fabio and von Känel, Hans},
   article_location = {WEINHEIM},
   article_number = {2},
   doi = {http://dx.doi.org/10.1002/pssa.201532643},
   keywords = {crystal defects; Ge microcrystals; patterned Si substrate; X-ray diffraction},
   language = {eng},
   issn = {1862-6300},
   journal = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE},
   title = {Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction},
   url = {http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532643/abstract},
   volume = {213},
   year = {2016}
}

TY  - JOUR
ID  - 1338601
AU  - Rozbořil, Jakub - Meduňa, Mojmír - Falub, Claudiu Valentin - Isa, Fabio - von Känel, Hans
PY  - 2016
TI  - Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction
JF  - PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
VL  - 213
IS  - 2
SP  - 463-469
EP  - 463-469
PB  - Wiley
SN  - 18626300
KW  - crystal defects
KW  - Ge microcrystals
KW  - patterned Si substrate
KW  - X-ray diffraction
UR  - http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532643/abstract
L2  - http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532643/abstract
N2  - Deposition on patterned substrates is a promising method for obtaining high quality, strain and defect free heteroepitaxial layers. In this paper we investigate the crystalline structure of quasi-continuous Ge layers consisting of closely spaced microcrystals on a Si substrate patterned in the form of a regular net of lithographically defined squared based pillars. Lattice parameters, strain and degree of relaxation of the Ge microcrystals are measured by standard high-resolution X-ray diffraction using reciprocal space mapping. In particular, we focus on the impact of Si pillar size and spacing on the Ge crystal quality by analyzing how the bending of crystal lattice planes caused by thermal stress relaxation and random crystal tilts affect the width of the diffraction peaks.
ER  -

ROZBOŘIL, Jakub, Mojmír MEDUŇA, Claudiu Valentin FALUB, Fabio ISA and Hans VON KÄNEL. Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction. \textit{PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}. WEINHEIM: Wiley, 2016, vol.~213, No~2, p.~463-469. ISSN~1862-6300. Available from: https://dx.doi.org/10.1002/pssa.201532643.

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