Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

KLENOVSKÝ, Petr, Vlastimil KŘÁPEK and Josef HUMLÍČEK. Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules. ACTA PHYSICA POLONICA A. Warsaw: POLISH ACAD SCIENCES INST PHYSICS, vol. 129, 1A, p. "A62"-"A65", 4 pp. ISSN 0587-4246. doi:10.12693/APhysPolA.129.A-62. 2016.

Basic information

• Original name: Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules
• Authors: KLENOVSKÝ, Petr (203 Czech Republic, guarantor, belonging to the institution), Vlastimil KŘÁPEK (203 Czech Republic) and Josef HUMLÍČEK (203 Czech Republic, belonging to the institution).
• Edition: ACTA PHYSICA POLONICA A, Warsaw, POLISH ACAD SCIENCES INST PHYSICS, 2016, 0587-4246.

Other information

• Original language: English
• Type of outcome: Article in a journal
• Field of Study: 10302 Condensed matter physics
• Country of publisher: Poland
• Confidentiality degree: is not subject to a state or trade secret
• WWW: URL
• Impact factor: Impact factor: 0.469
• RIV identification code: RIV/00216224:14740/16:00087604
• Organization unit: Central European Institute of Technology
• Doi: http://dx.doi.org/10.12693/APhysPolA.129.A-62
• UT WoS: 000371623600013
• Keywords in English: quantum dots; type-II bandalignment; quantum computing; theory
• Tags: rivok
• Tags: International impact, Reviewed

Abstract

We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 ueV/325 ueV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement.

Links

• ED1.1.00/02.0068, research and development project: Name: CEITEC - central european institute of technology
• EE2.3.20.0027, research and development project: Name: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií
• MUNI/A/1496/2014, interní kód MU: Name: Struktura, elektronová struktura a optická odezva pokročilých materiálů IV

Investor: Masaryk University, Category A

• TH01010419, research and development project: Name: Výzkum a vývoj nových technologií výroby bipolárního tranzistoru s izolovaným hradlem (TIGBT)

Investor: Technology Agency of the Czech Republic