Local strain and defects in silicon wafers due to
nanoindentation revealed by full-field X-ray microdiffraction
imaging

J 2015

Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging

LI, Z.J., A.N. DANILEWSKY, L. HELFEN, Petr MIKULÍK, D. HAENSCHKE et. al.

Basic information

Original name

Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging

Authors

LI, Z.J. (156 China), A.N. DANILEWSKY (276 Germany), L. HELFEN (276 Germany), Petr MIKULÍK (203 Czech Republic, belonging to the institution), D. HAENSCHKE (276 Germany), J. WITTGE (276 Germany), D. ALLEN (372 Ireland), P. MCNALLY (372 Ireland) and T. BAUMBACH (276 Germany)

Edition

Journal of Synchrotron Radiation, USA, WILEY-BLACKWELL PUBLISHING, 2015, 0909-0495

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.794 in 2014

RIV identification code

RIV/00216224:14310/15:00087093

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1107/S1600577515009650

UT WoS

000357407900027

Keywords in English

XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging

Abstract

V originále

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.

Citovat

LI, Z.J., A.N. DANILEWSKY, L. HELFEN, Petr MIKULÍK, D. HAENSCHKE, J. WITTGE, D. ALLEN, P. MCNALLY and T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. Journal of Synchrotron Radiation. USA: WILEY-BLACKWELL PUBLISHING, 2015, vol. 22, July, p. 1083-1090. ISSN 0909-0495. Available from: https://dx.doi.org/10.1107/S1600577515009650.

@article{1340227,
   author = {Li, Z.J. and Danilewsky, A.N. and Helfen, L. and Mikulík, Petr and Haenschke, D. and Wittge, J. and Allen, D. and McNally, P. and Baumbach, T.},
   article_location = {USA},
   article_number = {July},
   doi = {http://dx.doi.org/10.1107/S1600577515009650},
   keywords = {XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging},
   language = {eng},
   issn = {0909-0495},
   journal = {Journal of Synchrotron Radiation},
   title = {Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging},
   url = {http://journals.iucr.org/s/issues/2015/04/00/ie5133/},
   volume = {22},
   year = {2015}
}

TY  - JOUR
ID  - 1340227
AU  - Li, Z.J. - Danilewsky, A.N. - Helfen, L. - Mikulík, Petr - Haenschke, D. - Wittge, J. - Allen, D. - McNally, P. - Baumbach, T.
PY  - 2015
TI  - Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging
JF  - Journal of Synchrotron Radiation
VL  - 22
IS  - July
SP  - 1083-1090
EP  - 1083-1090
PB  - WILEY-BLACKWELL PUBLISHING
SN  - 09090495
KW  - XMDI
KW  - nanoindentation
KW  - silicon
KW  - strain
KW  - defect
KW  - x-rays
KW  - microdiffraction
KW  - imaging
UR  - http://journals.iucr.org/s/issues/2015/04/00/ie5133/
N2  - Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.
ER  -

LI, Z.J., A.N. DANILEWSKY, L. HELFEN, Petr MIKULÍK, D. HAENSCHKE, J. WITTGE, D. ALLEN, P. MCNALLY and T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. \textit{Journal of Synchrotron Radiation}. USA: WILEY-BLACKWELL PUBLISHING, 2015, vol.~22, July, p.~1083-1090. ISSN~0909-0495. Available from: https://dx.doi.org/10.1107/S1600577515009650.

Detailed Information on Publication Record