LI, Z.J., A.N. DANILEWSKY, L. HELFEN, Petr MIKULÍK, D. HAENSCHKE, J. WITTGE, D. ALLEN, P. MCNALLY and T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. Journal of Synchrotron Radiation. USA: WILEY-BLACKWELL PUBLISHING, 2015, vol. 22, July, p. 1083-1090. ISSN 0909-0495. Available from: https://dx.doi.org/10.1107/S1600577515009650. |
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@article{1340227, author = {Li, Z.J. and Danilewsky, A.N. and Helfen, L. and Mikulík, Petr and Haenschke, D. and Wittge, J. and Allen, D. and McNally, P. and Baumbach, T.}, article_location = {USA}, article_number = {July}, doi = {http://dx.doi.org/10.1107/S1600577515009650}, keywords = {XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging}, language = {eng}, issn = {0909-0495}, journal = {Journal of Synchrotron Radiation}, title = {Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging}, url = {http://journals.iucr.org/s/issues/2015/04/00/ie5133/}, volume = {22}, year = {2015} }
TY - JOUR ID - 1340227 AU - Li, Z.J. - Danilewsky, A.N. - Helfen, L. - Mikulík, Petr - Haenschke, D. - Wittge, J. - Allen, D. - McNally, P. - Baumbach, T. PY - 2015 TI - Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging JF - Journal of Synchrotron Radiation VL - 22 IS - July SP - 1083-1090 EP - 1083-1090 PB - WILEY-BLACKWELL PUBLISHING SN - 09090495 KW - XMDI KW - nanoindentation KW - silicon KW - strain KW - defect KW - x-rays KW - microdiffraction KW - imaging UR - http://journals.iucr.org/s/issues/2015/04/00/ie5133/ N2 - Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods. ER -
LI, Z.J., A.N. DANILEWSKY, L. HELFEN, Petr MIKULÍK, D. HAENSCHKE, J. WITTGE, D. ALLEN, P. MCNALLY and T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. \textit{Journal of Synchrotron Radiation}. USA: WILEY-BLACKWELL PUBLISHING, 2015, vol.~22, July, p.~1083-1090. ISSN~0909-0495. Available from: https://dx.doi.org/10.1107/S1600577515009650.
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