Lattice bending in three-dimensional Ge microcrystals studied
by X-ray nanodiffraction and modelling

J 2016

Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA et. al.

Basic information

Original name

Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

Name in Czech

Ohyb mřížky ve 3D Ge mikrokrystalech studovaných pomocí rtg nanodifrakce a modelováním

Authors

MEDUŇA, Mojmír (203 Czech Republic, guarantor, belonging to the institution), Claudiu Valentin FALUB (642 Romania), Fabio ISA (380 Italy), Anna MARZEGALLI (380 Italy), Daniel CHRASTINA (826 United Kingdom of Great Britain and Northern Ireland), Giovanni ISELLA (380 Italy), Leo MIGLIO (380 Italy), Alex DOMMANN (756 Switzerland) and Hans VON KAENEL (756 Switzerland)

Edition

Journal of Applied Crystallography, Chester, INT UNION CRYSTALLOGRAPHY, 2016, 1600-5767

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United Kingdom of Great Britain and Northern Ireland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.614

RIV identification code

RIV/00216224:14740/16:00089936

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1107/S1600576716006397

UT WoS

000377020600028

Keywords (in Czech)

skenovací rtg nanodifrakce; ohyb mřížky; Ge mikrokrystaly; relaxace teplotního pnutí

Keywords in English

scanning X-ray nanodiffraction; lattice bending; Ge microcrystals; thermal strain relaxation

Abstract

V originále

Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.

Links

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

EE2.3.20.0027, research and development project

Name: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií

LQ1601, research and development project

Name: CEITEC 2020 (Acronym: CEITEC2020)

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN and Hans VON KAENEL. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. Journal of Applied Crystallography. Chester: INT UNION CRYSTALLOGRAPHY, 2016, vol. 49, June, p. 976-986. ISSN 1600-5767. Available from: https://dx.doi.org/10.1107/S1600576716006397.

@article{1345310,
   author = {Meduňa, Mojmír and Falub, Claudiu Valentin and Isa, Fabio and Marzegalli, Anna and Chrastina, Daniel and Isella, Giovanni and Miglio, Leo and Dommann, Alex and von Kaenel, Hans},
   article_location = {Chester},
   article_number = {June},
   doi = {http://dx.doi.org/10.1107/S1600576716006397},
   keywords = {scanning X-ray nanodiffraction; lattice bending; Ge microcrystals; thermal strain relaxation},
   language = {eng},
   issn = {1600-5767},
   journal = {Journal of Applied Crystallography},
   title = {Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling},
   url = {http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html},
   volume = {49},
   year = {2016}
}

TY  - JOUR
ID  - 1345310
AU  - Meduňa, Mojmír - Falub, Claudiu Valentin - Isa, Fabio - Marzegalli, Anna - Chrastina, Daniel - Isella, Giovanni - Miglio, Leo - Dommann, Alex - von Kaenel, Hans
PY  - 2016
TI  - Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling
JF  - Journal of Applied Crystallography
VL  - 49
IS  - June
SP  - 976-986
EP  - 976-986
PB  - INT UNION CRYSTALLOGRAPHY
SN  - 16005767
KW  - scanning X-ray nanodiffraction
KW  - lattice bending
KW  - Ge microcrystals
KW  - thermal strain relaxation
UR  - http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html
L2  - http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html
N2  - Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.
ER  -

MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN and Hans VON KAENEL. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. \textit{Journal of Applied Crystallography}. Chester: INT UNION CRYSTALLOGRAPHY, 2016, vol.~49, June, p.~976-986. ISSN~1600-5767. Available from: https://dx.doi.org/10.1107/S1600576716006397.

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