Atmospheric pressure plasma etching of silicon dioxide using
diffuse coplanar surface barrier discharge generated in pure
hydrogen

J 2017

Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen

KRUMPOLEC, Richard, Jan ČECH, Jana JURMANOVÁ, Pavol ĎURINA, Mirko ČERNÁK et. al.

Basic information

Original name

Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen

Authors

KRUMPOLEC, Richard (703 Slovakia, guarantor, belonging to the institution), Jan ČECH (203 Czech Republic, belonging to the institution), Jana JURMANOVÁ (203 Czech Republic, belonging to the institution), Pavol ĎURINA (703 Slovakia) and Mirko ČERNÁK (703 Slovakia, belonging to the institution)

Edition

Surface & coatings technology, LAUSANNE, SWITZERLAND, Elsevier, 2017, 0257-8972

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.906

RIV identification code

RIV/00216224:14310/17:00095958

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1016/j.surfcoat.2016.11.036

UT WoS

000396184400036

Keywords in English

DCSBD; Hydrogen plasma; Low temperature; SiO2; etching; Atmospheric pressure

Abstract

V originále

We report on the method of dry etching of silicon dioxide (SiO2) layers by cold plasma treatment at atmospheric pressure in pure hydrogen using Diffuse Coplanar Surface Barrier Discharge (DCSBD). The SiO2 etching rate was estimated at ~ 1 nm/min. The studied plasma process was found to be the composition of plasma induced reduction and etching. The changes in surface morphology of etched samples were observed by scanning electron microscopy. X-ray photoelectron spectroscopy analysis was applied to identify the surface chemical changes due to the reduction processes. Two regimes of plasma treatment were examined. While the dynamic treatment, where the treated surface was moved relative to the plasma source, led to a homogeneous process, the treatment in static conditions resulted in a stripe-type pattern on the surface of the samples reflecting the electrode structure of the plasma source. The results provide a basis for a new and simple way to prepare clean, native oxide free silicon surfaces in dry plasma process at atmospheric pressure.

Links

ED2.1.00/03.0086, research and development project

Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, research and development project

Name: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

KRUMPOLEC, Richard, Jan ČECH, Jana JURMANOVÁ, Pavol ĎURINA and Mirko ČERNÁK. Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen. Surface & coatings technology. LAUSANNE, SWITZERLAND: Elsevier, 2017, vol. 309, January, p. 301-308. ISSN 0257-8972. Available from: https://dx.doi.org/10.1016/j.surfcoat.2016.11.036.

@article{1363744,
   author = {Krumpolec, Richard and Čech, Jan and Jurmanová, Jana and Ďurina, Pavol and Černák, Mirko},
   article_location = {LAUSANNE, SWITZERLAND},
   article_number = {January},
   doi = {http://dx.doi.org/10.1016/j.surfcoat.2016.11.036},
   keywords = {DCSBD; Hydrogen plasma; Low temperature; SiO2; etching; Atmospheric pressure},
   language = {eng},
   issn = {0257-8972},
   journal = {Surface & coatings technology},
   title = {Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen},
   url = {http://www.sciencedirect.com/science/article/pii/S0257897216311422},
   volume = {309},
   year = {2017}
}

TY  - JOUR
ID  - 1363744
AU  - Krumpolec, Richard - Čech, Jan - Jurmanová, Jana - Ďurina, Pavol - Černák, Mirko
PY  - 2017
TI  - Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen
JF  - Surface & coatings technology
VL  - 309
IS  - January
SP  - 301-308
EP  - 301-308
PB  - Elsevier
SN  - 02578972
KW  - DCSBD
KW  - Hydrogen plasma
KW  - Low temperature
KW  - SiO2
KW  - etching
KW  - Atmospheric pressure
UR  - http://www.sciencedirect.com/science/article/pii/S0257897216311422
N2  - We report on the method of dry etching of silicon dioxide (SiO2) layers by cold plasma treatment at atmospheric pressure in pure hydrogen using Diffuse Coplanar Surface Barrier Discharge (DCSBD). The SiO2 etching rate was estimated at ~ 1 nm/min. The studied plasma process was found to be the composition of plasma induced reduction and etching. The changes in surface morphology of etched samples were observed by scanning electron microscopy. X-ray photoelectron spectroscopy analysis was applied to identify the surface chemical changes due to the reduction processes. Two regimes of plasma treatment were examined. While the dynamic treatment, where the treated surface was moved relative to the plasma source, led to a homogeneous process, the treatment in static conditions resulted in a stripe-type pattern on the surface of the samples reflecting the electrode structure of the plasma source. The results provide a basis for a new and simple way to prepare clean, native oxide free silicon surfaces in dry plasma process at atmospheric pressure.
ER  -

KRUMPOLEC, Richard, Jan ČECH, Jana JURMANOVÁ, Pavol ĎURINA and Mirko ČERNÁK. Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen. \textit{Surface \&{} coatings technology}. LAUSANNE, SWITZERLAND: Elsevier, 2017, vol.~309, January, p.~301-308. ISSN~0257-8972. Available from: https://dx.doi.org/10.1016/j.surfcoat.2016.11.036.

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