Detailed Information on Publication Record
2017
Surface chemistry and initial growth of Al2O3 on plasma modified PTFE studied by ALD
KRUMPOLEC, Richard, David Campbell CAMERON, Tomáš HOMOLA and Mirko ČERNÁKBasic information
Original name
Surface chemistry and initial growth of Al2O3 on plasma modified PTFE studied by ALD
Authors
KRUMPOLEC, Richard (703 Slovakia, guarantor, belonging to the institution), David Campbell CAMERON (826 United Kingdom of Great Britain and Northern Ireland, belonging to the institution), Tomáš HOMOLA (703 Slovakia, belonging to the institution) and Mirko ČERNÁK (703 Slovakia, belonging to the institution)
Edition
Surfaces and Interfaces, Amsterdam, Elsevier Science, 2017, 2468-0230
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10305 Fluids and plasma physics
Country of publisher
Netherlands
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
RIV identification code
RIV/00216224:14310/17:00095963
Organization unit
Faculty of Science
UT WoS
000408907800031
Keywords in English
Atomic layer deposition; Nucleation; Plasma pre-treatment; Diffuse coplanar surface barrier discharge; PTFE
Tags
International impact, Reviewed
Změněno: 12/4/2018 10:14, Ing. Nicole Zrilić
Abstract
V originále
An atmospheric-pressure DCSBD plasma in ambient air was used to clean and activate PTFE surfaces before low-temperature atomic layer deposition of Al2O3. It emerged that the fastest nucleation, leading to complete Al2O3 films, took place on PTFE samples that had been treated by plasma that led to the highest concentration of oxygen-containing functional groups. This condition required that some carbon contamination remained on the surface. Complete removal of surface carbon contamination to leave a surface close to stoichiometric PTFE was not beneficial from a film nucleation point of view, due to its lack of active nucleation sites. The results show that DCSBD treatment of PTFE in ambient air is an effective method of controlling and enhancing the nucleation process of thin films deposited by ALD on this substrate material.
Links
LO1411, research and development project |
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