J 2017

Surface chemistry and initial growth of Al2O3 on plasma modified PTFE studied by ALD

KRUMPOLEC, Richard, David Campbell CAMERON, Tomáš HOMOLA and Mirko ČERNÁK

Basic information

Original name

Surface chemistry and initial growth of Al2O3 on plasma modified PTFE studied by ALD

Authors

KRUMPOLEC, Richard (703 Slovakia, guarantor, belonging to the institution), David Campbell CAMERON (826 United Kingdom of Great Britain and Northern Ireland, belonging to the institution), Tomáš HOMOLA (703 Slovakia, belonging to the institution) and Mirko ČERNÁK (703 Slovakia, belonging to the institution)

Edition

Surfaces and Interfaces, Amsterdam, Elsevier Science, 2017, 2468-0230

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

RIV identification code

RIV/00216224:14310/17:00095963

Organization unit

Faculty of Science

UT WoS

000408907800031

Keywords in English

Atomic layer deposition; Nucleation; Plasma pre-treatment; Diffuse coplanar surface barrier discharge; PTFE

Tags

Tags

International impact, Reviewed
Změněno: 12/4/2018 10:14, Ing. Nicole Zrilić

Abstract

V originále

An atmospheric-pressure DCSBD plasma in ambient air was used to clean and activate PTFE surfaces before low-temperature atomic layer deposition of Al2O3. It emerged that the fastest nucleation, leading to complete Al2O3 films, took place on PTFE samples that had been treated by plasma that led to the highest concentration of oxygen-containing functional groups. This condition required that some carbon contamination remained on the surface. Complete removal of surface carbon contamination to leave a surface close to stoichiometric PTFE was not beneficial from a film nucleation point of view, due to its lack of active nucleation sites. The results show that DCSBD treatment of PTFE in ambient air is an effective method of controlling and enhancing the nucleation process of thin films deposited by ALD on this substrate material.

Links

LO1411, research and development project
Name: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)
Investor: Ministry of Education, Youth and Sports of the CR