Preparation of (001) preferentially oriented titanium thin
films by ion-beam sputtering deposition on thermal silicon
dioxide

J 2016

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

GABLECH, Imrich, Vojtěch SVATOŠ, Ondřej CAHA, Milos HRABOVSKY, Jan PRASEK et. al.

Basic information

Original name

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

Authors

GABLECH, Imrich (203 Czech Republic), Vojtěch SVATOŠ (203 Czech Republic), Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution), Milos HRABOVSKY (203 Czech Republic), Jan PRASEK (203 Czech Republic), Jaromír HUBÁLEK (203 Czech Republic) and Tomáš ŠIKOLA (203 Czech Republic)

Edition

Journal of materials science, NEW YORK, Springer, 2016, 0022-2461

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

20201 Electrical and electronic engineering

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.599

RIV identification code

RIV/00216224:14740/16:00093661

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1007/s10853-015-9648-y

UT WoS

000368054100005

Keywords in English

titanium; sputtering; x-ray diffraction

Abstract

ORIG CZ

V originále

We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 A degrees C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.

In Czech

Links

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

LM2011020, research and development project

Name: CEITEC ? open access

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

GABLECH, Imrich, Vojtěch SVATOŠ, Ondřej CAHA, Milos HRABOVSKY, Jan PRASEK, Jaromír HUBÁLEK and Tomáš ŠIKOLA. Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide. Journal of materials science. NEW YORK: Springer, 2016, vol. 51, No 7, p. 3329-3336. ISSN 0022-2461. Available from: https://dx.doi.org/10.1007/s10853-015-9648-y.

@article{1373385,
   author = {Gablech, Imrich and Svatoš, Vojtěch and Caha, Ondřej and Hrabovsky, Milos and Prasek, Jan and Hubálek, Jaromír and Šikola, Tomáš},
   article_location = {NEW YORK},
   article_number = {7},
   doi = {http://dx.doi.org/10.1007/s10853-015-9648-y},
   keywords = {titanium; sputtering; x-ray diffraction},
   language = {eng},
   issn = {0022-2461},
   journal = {Journal of materials science},
   title = {Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide},
   url = {http://link.springer.com/article/10.1007%2Fs10853-015-9648-y},
   volume = {51},
   year = {2016}
}

TY  - JOUR
ID  - 1373385
AU  - Gablech, Imrich - Svatoš, Vojtěch - Caha, Ondřej - Hrabovsky, Milos - Prasek, Jan - Hubálek, Jaromír - Šikola, Tomáš
PY  - 2016
TI  - Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide
JF  - Journal of materials science
VL  - 51
IS  - 7
SP  - 3329-3336
EP  - 3329-3336
PB  - Springer
SN  - 00222461
KW  - titanium
KW  - sputtering
KW  - x-ray diffraction
UR  - http://link.springer.com/article/10.1007%2Fs10853-015-9648-y
L2  - http://link.springer.com/article/10.1007%2Fs10853-015-9648-y
N2  - We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 A degrees C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.
ER  -

GABLECH, Imrich, Vojtěch SVATOŠ, Ondřej CAHA, Milos HRABOVSKY, Jan PRASEK, Jaromír HUBÁLEK and Tomáš ŠIKOLA. Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide. \textit{Journal of materials science}. NEW YORK: Springer, 2016, vol.~51, No~7, p.~3329-3336. ISSN~0022-2461. Available from: https://dx.doi.org/10.1007/s10853-015-9648-y.

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