| VOLOBUEV, V., P. MANDAL, M. GALICKA, Ondřej CAHA, J. SANCHEZ-BARRIGA, D. DISANTE, A. VARYKHALOV, A. KHIAR, S. PICOZZI, Günther BAUER, P. KACMAN, R. BUCZKO, O. RADER a Günter SPRINGHOLZ. Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. Online. ADVANCED MATERIALS. WEINHEIM: WILEY-V C H VERLAG GMBH, 2017, roč. 29, č. 3, s. "1604185-1"-"1604185-9", 9 s. ISSN 0935-9648. Dostupné z: https://dx.doi.org/10.1002/adma.201604185. [citováno 2024-04-24] |
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@article{1375764,
author = {Volobuev, V. and Mandal, P. and Galicka, M. and Caha, Ondřej and SanchezandBarriga, J. and DiSante, D. and Varykhalov, A. and Khiar, A. and Picozzi, S. and Bauer, Günther and Kacman, P. and Buczko, R. and Rader, O. and Springholz, Günter},
article_location = {WEINHEIM},
article_number = {3},
doi = {http://dx.doi.org/10.1002/adma.201604185},
keywords = {MOLECULAR-BEAM EPITAXY; SNTE; GROWTH; PBTE; STATES; REALIZATION; INTERFACE; SURFACES; STRAIN; PHASE},
language = {eng},
issn = {0935-9648},
journal = {ADVANCED MATERIALS},
title = {Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk},
volume = {29},
year = {2017}
}
TY - JOUR
ID - 1375764
AU - Volobuev, V. - Mandal, P. - Galicka, M. - Caha, Ondřej - Sanchez-Barriga, J. - DiSante, D. - Varykhalov, A. - Khiar, A. - Picozzi, S. - Bauer, Günther - Kacman, P. - Buczko, R. - Rader, O. - Springholz, Günter
PY - 2017
TI - Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk
JF - ADVANCED MATERIALS
VL - 29
IS - 3
SP - "1604185-1"-"1604185-9"
EP - "1604185-1"-"1604185-9"
PB - WILEY-V C H VERLAG GMBH
SN - 09359648
KW - MOLECULAR-BEAM EPITAXY
KW - SNTE
KW - GROWTH
KW - PBTE
KW - STATES
KW - REALIZATION
KW - INTERFACE
KW - SURFACES
KW - STRAIN
KW - PHASE
N2 - The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.
ER -
VOLOBUEV, V., P. MANDAL, M. GALICKA, Ondřej CAHA, J. SANCHEZ-BARRIGA, D. DISANTE, A. VARYKHALOV, A. KHIAR, S. PICOZZI, Günther BAUER, P. KACMAN, R. BUCZKO, O. RADER a Günter SPRINGHOLZ. Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. Online. \textit{ADVANCED MATERIALS}. WEINHEIM: WILEY-V C H VERLAG GMBH, 2017, roč.~29, č.~3, s.~''1604185-1''-''1604185-9'', 9 s. ISSN~0935-9648. Dostupné z: https://dx.doi.org/10.1002/adma.201604185. [citováno 2024-04-24]
|
