Giant Rashba Splitting in Pb1-xSnxTe (111) Topological
Crystalline Insulator Films Controlled by Bi Doping in the Bulk

J 2017

Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

VOLOBUEV, V., P. MANDAL, M. GALICKA, Ondřej CAHA, J. SANCHEZ-BARRIGA et. al.

Basic information

Original name

Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

Authors

VOLOBUEV, V. (804 Ukraine), P. MANDAL (356 India), M. GALICKA (616 Poland), Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution), J. SANCHEZ-BARRIGA (724 Spain), D. DISANTE (380 Italy), A. VARYKHALOV (643 Russian Federation), A. KHIAR (40 Austria), S. PICOZZI (380 Italy), Günther BAUER (40 Austria), P. KACMAN (616 Poland), R. BUCZKO (616 Poland), O. RADER (276 Germany) and Günter SPRINGHOLZ (40 Austria)

Edition

ADVANCED MATERIALS, WEINHEIM, WILEY-V C H VERLAG GMBH, 2017, 0935-9648

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Germany

Confidentiality degree

není předmětem státního či obchodního tajemství

Impact factor

Impact factor: 21.950

RIV identification code

RIV/00216224:14310/17:00096311

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1002/adma.201604185

UT WoS

000392729800018

Keywords (in Czech)

SnTe; PbTe; růst; povrchy; rozhraní; elektronová struktura

Keywords in English

MOLECULAR-BEAM EPITAXY; SNTE; GROWTH; PBTE; STATES; REALIZATION; INTERFACE; SURFACES; STRAIN; PHASE

Abstract

ORIG CZ

V originále

The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.

In Czech

Bylo prokázáno velké Rashbovo rozštění v PbSnTe topologických izolátorech.

Citovat

VOLOBUEV, V., P. MANDAL, M. GALICKA, Ondřej CAHA, J. SANCHEZ-BARRIGA, D. DISANTE, A. VARYKHALOV, A. KHIAR, S. PICOZZI, Günther BAUER, P. KACMAN, R. BUCZKO, O. RADER and Günter SPRINGHOLZ. Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. ADVANCED MATERIALS. WEINHEIM: WILEY-V C H VERLAG GMBH, 2017, vol. 29, No 3, p. "1604185-1"-"1604185-9", 9 pp. ISSN 0935-9648. Available from: https://dx.doi.org/10.1002/adma.201604185.

@article{1375764,
   author = {Volobuev, V. and Mandal, P. and Galicka, M. and Caha, Ondřej and SanchezandBarriga, J. and DiSante, D. and Varykhalov, A. and Khiar, A. and Picozzi, S. and Bauer, Günther and Kacman, P. and Buczko, R. and Rader, O. and Springholz, Günter},
   article_location = {WEINHEIM},
   article_number = {3},
   doi = {http://dx.doi.org/10.1002/adma.201604185},
   keywords = {MOLECULAR-BEAM EPITAXY; SNTE; GROWTH; PBTE; STATES; REALIZATION; INTERFACE; SURFACES; STRAIN; PHASE},
   language = {eng},
   issn = {0935-9648},
   journal = {ADVANCED MATERIALS},
   title = {Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk},
   volume = {29},
   year = {2017}
}

TY  - JOUR
ID  - 1375764
AU  - Volobuev, V. - Mandal, P. - Galicka, M. - Caha, Ondřej - Sanchez-Barriga, J. - DiSante, D. - Varykhalov, A. - Khiar, A. - Picozzi, S. - Bauer, Günther - Kacman, P. - Buczko, R. - Rader, O. - Springholz, Günter
PY  - 2017
TI  - Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk
JF  - ADVANCED MATERIALS
VL  - 29
IS  - 3
SP  - "1604185-1"-"1604185-9"
EP  - "1604185-1"-"1604185-9"
PB  - WILEY-V C H VERLAG GMBH
SN  - 09359648
KW  - MOLECULAR-BEAM EPITAXY
KW  - SNTE
KW  - GROWTH
KW  - PBTE
KW  - STATES
KW  - REALIZATION
KW  - INTERFACE
KW  - SURFACES
KW  - STRAIN
KW  - PHASE
N2  - The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.
ER  -

VOLOBUEV, V., P. MANDAL, M. GALICKA, Ondřej CAHA, J. SANCHEZ-BARRIGA, D. DISANTE, A. VARYKHALOV, A. KHIAR, S. PICOZZI, Günther BAUER, P. KACMAN, R. BUCZKO, O. RADER and Günter SPRINGHOLZ. Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. \textit{ADVANCED MATERIALS}. WEINHEIM: WILEY-V C H VERLAG GMBH, 2017, vol.~29, No~3, p.~''1604185-1''-''1604185-9'', 9 pp. ISSN~0935-9648. Available from: https://dx.doi.org/10.1002/adma.201604185.

Detailed Information on Publication Record