Detailed Information on Publication Record
2016
Accurate prediction of band gaps and optical properties of HfO2
ONDRAČKA, Pavel, David HOLEC, David NEČAS and Lenka ZAJÍČKOVÁBasic information
Original name
Accurate prediction of band gaps and optical properties of HfO2
Authors
ONDRAČKA, Pavel (203 Czech Republic, belonging to the institution), David HOLEC (40 Austria), David NEČAS (203 Czech Republic, belonging to the institution) and Lenka ZAJÍČKOVÁ (203 Czech Republic, guarantor, belonging to the institution)
Edition
JOURNAL OF PHYSICS D-APPLIED PHYSICS, Bristol, Institute of Physics Publishing, 2016, 0022-3727
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10306 Optics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 2.588
RIV identification code
RIV/00216224:14740/16:00094067
Organization unit
Central European Institute of Technology
UT WoS
000404341800001
Keywords in English
band gap; BSE; DFT; dielectric function; hafnia; HfO2; TB-mBJ
Změněno: 28/3/2019 16:09, Mgr. Pavla Foltynová, Ph.D.
Abstract
V originále
We report on optical properties of various polymorphs of hafnia predicted within the framework of density functional theory. The full potential linearised augmented plane wave method was employed together with the Tran-Blaha modified Becke-Johnson potential (TB-mBJ) for exchange and local density approximation for correlation. Unit cells of monoclinic, cubic and tetragonal crystalline, and a simulated annealing-based model of amorphous hafnia were fully relaxed with respect to internal positions and lattice parameters. Electronic structures and band gaps for monoclinic, cubic, tetragonal and amorphous hafnia were calculated using three different TB-mBJ parametrisations and the results were critically compared with the available experimental and theoretical reports. Conceptual differences between a straightforward comparison of experimental measurements to a calculated band gap on the one hand and to a whole electronic structure (density of electronic states) on the other hand, were pointed out, suggesting the latter should be used whenever possible. Finally, dielectric functions were calculated at two levels, using the random phase approximation without local field effects and with a more accurate Bethe-Salpether equation (BSE) to account for excitonic effects. We conclude that a satisfactory agreement with experimental data for HfO2 was obtained only in the latter case.
Links
LQ1601, research and development project |
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7AMB15AT017, research and development project |
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