Hafnium oxide thin films as a barrier against copper diffusion
in solar absorbers

J 2017

Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

KOTILAINEN, Minna Paula Katriina, Richard KRUMPOLEC, Daniel FRANTA, Pavel SOUČEK, Tomáš HOMOLA et. al.

Basic information

Original name

Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

Authors

KOTILAINEN, Minna Paula Katriina (246 Finland, belonging to the institution), Richard KRUMPOLEC (703 Slovakia, guarantor, belonging to the institution), Daniel FRANTA (203 Czech Republic, belonging to the institution), Pavel SOUČEK (203 Czech Republic, belonging to the institution), Tomáš HOMOLA (703 Slovakia, belonging to the institution), David Campbell CAMERON (826 United Kingdom of Great Britain and Northern Ireland, belonging to the institution) and Petri VUORISTO (246 Finland)

Edition

Solar Energy Materials and Solar Cells, AMSTERDAM, NETHERLANDS, ELSEVIER SCIENCE BV, 2017, 0927-0248

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 5.018

RIV identification code

RIV/00216224:14310/17:00096512

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1016/j.solmat.2017.02.033

UT WoS

000401208200018

Keywords in English

Solar absorber;Diffusion barrier;Thermal ageing;Copper diffusion;HfO2 thin film

Abstract

V originále

The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.

Links

ED2.1.00/03.0086, research and development project

Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, research and development project

Name: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

KOTILAINEN, Minna Paula Katriina, Richard KRUMPOLEC, Daniel FRANTA, Pavel SOUČEK, Tomáš HOMOLA, David Campbell CAMERON and Petri VUORISTO. Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers. Solar Energy Materials and Solar Cells. AMSTERDAM, NETHERLANDS: ELSEVIER SCIENCE BV, 2017, vol. 166, July, p. 140-146. ISSN 0927-0248. Available from: https://dx.doi.org/10.1016/j.solmat.2017.02.033.

@article{1378718,
   author = {Kotilainen, Minna Paula Katriina and Krumpolec, Richard and Franta, Daniel and Souček, Pavel and Homola, Tomáš and Cameron, David Campbell and Vuoristo, Petri},
   article_location = {AMSTERDAM, NETHERLANDS},
   article_number = {July},
   doi = {http://dx.doi.org/10.1016/j.solmat.2017.02.033},
   keywords = {Solar absorber;Diffusion barrier;Thermal ageing;Copper diffusion;HfO2 thin film},
   language = {eng},
   issn = {0927-0248},
   journal = {Solar Energy Materials and Solar Cells},
   title = {Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers},
   url = {http://www.sciencedirect.com/science/article/pii/S0927024817300958},
   volume = {166},
   year = {2017}
}

TY  - JOUR
ID  - 1378718
AU  - Kotilainen, Minna Paula Katriina - Krumpolec, Richard - Franta, Daniel - Souček, Pavel - Homola, Tomáš - Cameron, David Campbell - Vuoristo, Petri
PY  - 2017
TI  - Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers
JF  - Solar Energy Materials and Solar Cells
VL  - 166
IS  - July
SP  - 140-146
EP  - 140-146
PB  - ELSEVIER SCIENCE BV
SN  - 09270248
KW  - Solar absorber;Diffusion barrier;Thermal ageing;Copper diffusion;HfO2 thin film
UR  - http://www.sciencedirect.com/science/article/pii/S0927024817300958
L2  - http://www.sciencedirect.com/science/article/pii/S0927024817300958
N2  - The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.
ER  -

KOTILAINEN, Minna Paula Katriina, Richard KRUMPOLEC, Daniel FRANTA, Pavel SOUČEK, Tomáš HOMOLA, David Campbell CAMERON and Petri VUORISTO. Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers. \textit{Solar Energy Materials and Solar Cells}. AMSTERDAM, NETHERLANDS: ELSEVIER SCIENCE BV, 2017, vol.~166, July, p.~140-146. ISSN~0927-0248. Available from: https://dx.doi.org/10.1016/j.solmat.2017.02.033.

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