Inversion of the exciton built-in dipole moment in In(Ga)As
quantum dots via nonlinear piezoelectric effect

J 2017

Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

ABERL, Johannes, Petr KLENOVSKÝ, Johannes S. WILDMANN, Javier MARTÍN-SÁNCHEZ, Thomas FROMHERZ et. al.

Basic information

Original name

Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

Authors

ABERL, Johannes (40 Austria), Petr KLENOVSKÝ (203 Czech Republic, guarantor, belonging to the institution), Johannes S. WILDMANN (40 Austria), Javier MARTÍN-SÁNCHEZ (724 Spain), Thomas FROMHERZ (40 Austria), Eugenio ZALLO (380 Italy), Josef HUMLÍČEK (203 Czech Republic, belonging to the institution), Armando RASTELLI (380 Italy) and Rinaldo TROTTA (380 Italy)

Edition

Physical Review B, COLLEGE PK, MD USA, AMER PHYSICAL SOC, 2017, 2469-9950

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 3.813

RIV identification code

RIV/00216224:14310/17:00097198

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1103/PhysRevB.96.045414

UT WoS

000405364100006

Keywords in English

piezoelectricity; quantum dot; strain tuning; NIP diode; electric dipole

Abstract

V originále

We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is due to piezoelectricity. We present a model to calculate the applied stress, taking advantage of the so-called piezotronic effect, which produces significant changes in the current-voltage characteristics of the strained diode-membranes containing the quantum dots. Finally, self-consistent k.p calculations reveal that the experimental findings can be only accounted for by the nonlinear piezoelectric effect, whose importance in quantum dot physics has been theoretically recognized although it has proven difficult to single out experimentally.

Links

LQ1601, research and development project

Name: CEITEC 2020 (Acronym: CEITEC2020)

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

ABERL, Johannes, Petr KLENOVSKÝ, Johannes S. WILDMANN, Javier MARTÍN-SÁNCHEZ, Thomas FROMHERZ, Eugenio ZALLO, Josef HUMLÍČEK, Armando RASTELLI and Rinaldo TROTTA. Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect. Physical Review B. COLLEGE PK, MD USA: AMER PHYSICAL SOC, 2017, vol. 96, No 4, p. nestránkováno, 6 pp. ISSN 2469-9950. Available from: https://dx.doi.org/10.1103/PhysRevB.96.045414.

@article{1385671,
   author = {Aberl, Johannes and Klenovský, Petr and Wildmann, Johannes S. and MartínandSánchez, Javier and Fromherz, Thomas and Zallo, Eugenio and Humlíček, Josef and Rastelli, Armando and Trotta, Rinaldo},
   article_location = {COLLEGE PK, MD USA},
   article_number = {4},
   doi = {http://dx.doi.org/10.1103/PhysRevB.96.045414},
   keywords = {piezoelectricity; quantum dot; strain tuning; NIP diode; electric dipole},
   language = {eng},
   issn = {2469-9950},
   journal = {Physical Review B},
   title = {Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect},
   url = {https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.045414},
   volume = {96},
   year = {2017}
}

TY  - JOUR
ID  - 1385671
AU  - Aberl, Johannes - Klenovský, Petr - Wildmann, Johannes S. - Martín-Sánchez, Javier - Fromherz, Thomas - Zallo, Eugenio - Humlíček, Josef - Rastelli, Armando - Trotta, Rinaldo
PY  - 2017
TI  - Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect
JF  - Physical Review B
VL  - 96
IS  - 4
SP  - nestránkováno
EP  - nestránkováno
PB  - AMER PHYSICAL SOC
SN  - 24699950
KW  - piezoelectricity
KW  - quantum dot
KW  - strain tuning
KW  - NIP diode
KW  - electric dipole
UR  - https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.045414
L2  - https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.045414
N2  - We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is due to piezoelectricity. We present a model to calculate the applied stress, taking advantage of the so-called piezotronic effect, which produces significant changes in the current-voltage characteristics of the strained diode-membranes containing the quantum dots. Finally, self-consistent k.p calculations reveal that the experimental findings can be only accounted for by the nonlinear piezoelectric effect, whose importance in quantum dot physics has been theoretically recognized although it has proven difficult to single out experimentally.
ER  -

ABERL, Johannes, Petr KLENOVSKÝ, Johannes S. WILDMANN, Javier MARTÍN-SÁNCHEZ, Thomas FROMHERZ, Eugenio ZALLO, Josef HUMLÍČEK, Armando RASTELLI and Rinaldo TROTTA. Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect. \textit{Physical Review B}. COLLEGE PK, MD USA: AMER PHYSICAL SOC, 2017, vol.~96, No~4, p.~nestránkováno, 6 pp. ISSN~2469-9950. Available from: https://dx.doi.org/10.1103/PhysRevB.96.045414.

Detailed Information on Publication Record