Strain Engineering in Highly Mismatched SiGe/Si
Heterostructures

J 2017

Strain Engineering in Highly Mismatched SiGe/Si Heterostructures

ISA, Fabio, Arik JUNG, Marco SALVALAGLIO, Yadira Arroyo Rojas DASILVA, Ivan MAROZAU et. al.

Basic information

Original name

Strain Engineering in Highly Mismatched SiGe/Si Heterostructures

Name in Czech

Deformační inženýrství ve velmi nepřizpůsobených SiGe/Si Heterostrukturách

Authors

ISA, Fabio (756 Switzerland), Arik JUNG (756 Switzerland), Marco SALVALAGLIO (276 Germany), Yadira Arroyo Rojas DASILVA (756 Switzerland), Ivan MAROZAU (756 Switzerland), Mojmír MEDUŇA (203 Czech Republic, guarantor, belonging to the institution), Michael BARGET (380 Italy), Anna MARZEGALLI (380 Italy), Giovanni ISELLA (380 Italy), Rolf ERNI (756 Switzerland), Fabio PEZZOLI (380 Italy), Emiliano BONERA (380 Italy), Philippe NIEDERMANN (756 Switzerland), Olha SEREDA (756 Switzerland), Pierangelo GRONING (756 Switzerland), Francesco MONTALENTI (380 Italy) and Hans VON KAENEL (756 Switzerland)

Edition

Materials Science in Semiconductor Processing, Oxford, Elsevier Science, 2017, 1369-8001

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United Kingdom of Great Britain and Northern Ireland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.593

RIV identification code

RIV/00216224:14310/17:00097339

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1016/j.mssp.2016.08.019

UT WoS

000410870900022

Keywords (in Czech)

Deformační inženýrství; Dislokace; Elastická relaxace; Vzorkované substráty; SiGe

Keywords in English

Strain engineering; Dislocations; Elastic relaxation; Patterned substrates; SiGe

Abstract

ORIG CZ

V originále

In this work we present an innovative approach to realise coherent, highly-mismatched 3-dimensional heterostructures on substrates patterned at the micrometre-scale.

In Czech

V této práci předkládáme inovativní přístup k realizaci koherentních, vysoce nepřizpůsobených 3-rozměrných heterostruktur na substrátech vzorkovaných v měřítku mikrometru.

Citovat

ISA, Fabio, Arik JUNG, Marco SALVALAGLIO, Yadira Arroyo Rojas DASILVA, Ivan MAROZAU, Mojmír MEDUŇA, Michael BARGET, Anna MARZEGALLI, Giovanni ISELLA, Rolf ERNI, Fabio PEZZOLI, Emiliano BONERA, Philippe NIEDERMANN, Olha SEREDA, Pierangelo GRONING, Francesco MONTALENTI and Hans VON KAENEL. Strain Engineering in Highly Mismatched SiGe/Si Heterostructures. Materials Science in Semiconductor Processing. Oxford: Elsevier Science, 2017, vol. 70, November, p. 117-122. ISSN 1369-8001. Available from: https://dx.doi.org/10.1016/j.mssp.2016.08.019.

@article{1387401,
   author = {Isa, Fabio and Jung, Arik and Salvalaglio, Marco and Dasilva, Yadira Arroyo Rojas and Marozau, Ivan and Meduňa, Mojmír and Barget, Michael and Marzegalli, Anna and Isella, Giovanni and Erni, Rolf and Pezzoli, Fabio and Bonera, Emiliano and Niedermann, Philippe and Sereda, Olha and Groning, Pierangelo and Montalenti, Francesco and von Kaenel, Hans},
   article_location = {Oxford},
   article_number = {November},
   doi = {http://dx.doi.org/10.1016/j.mssp.2016.08.019},
   keywords = {Strain engineering; Dislocations; Elastic relaxation; Patterned substrates; SiGe},
   language = {eng},
   issn = {1369-8001},
   journal = {Materials Science in Semiconductor Processing},
   title = {Strain Engineering in Highly Mismatched SiGe/Si Heterostructures},
   url = {http://www.sciencedirect.com/science/article/pii/S1369800116303201?via%3Dihub},
   volume = {70},
   year = {2017}
}

TY  - JOUR
ID  - 1387401
AU  - Isa, Fabio - Jung, Arik - Salvalaglio, Marco - Dasilva, Yadira Arroyo Rojas - Marozau, Ivan - Meduňa, Mojmír - Barget, Michael - Marzegalli, Anna - Isella, Giovanni - Erni, Rolf - Pezzoli, Fabio - Bonera, Emiliano - Niedermann, Philippe - Sereda, Olha - Groning, Pierangelo - Montalenti, Francesco - von Kaenel, Hans
PY  - 2017
TI  - Strain Engineering in Highly Mismatched SiGe/Si Heterostructures
JF  - Materials Science in Semiconductor Processing
VL  - 70
IS  - November
SP  - 117-122
EP  - 117-122
PB  - Elsevier Science
SN  - 13698001
KW  - Strain engineering
KW  - Dislocations
KW  - Elastic relaxation
KW  - Patterned substrates
KW  - SiGe
UR  - http://www.sciencedirect.com/science/article/pii/S1369800116303201?via%3Dihub
L2  - http://www.sciencedirect.com/science/article/pii/S1369800116303201?via%3Dihub
N2  - In this work we present an innovative approach to realise coherent, highly-mismatched 3-dimensional heterostructures on substrates patterned at the micrometre-scale.
ER  -

ISA, Fabio, Arik JUNG, Marco SALVALAGLIO, Yadira Arroyo Rojas DASILVA, Ivan MAROZAU, Mojmír MEDUŇA, Michael BARGET, Anna MARZEGALLI, Giovanni ISELLA, Rolf ERNI, Fabio PEZZOLI, Emiliano BONERA, Philippe NIEDERMANN, Olha SEREDA, Pierangelo GRONING, Francesco MONTALENTI and Hans VON KAENEL. Strain Engineering in Highly Mismatched SiGe/Si Heterostructures. \textit{Materials Science in Semiconductor Processing}. Oxford: Elsevier Science, 2017, vol.~70, November, p.~117-122. ISSN~1369-8001. Available from: https://dx.doi.org/10.1016/j.mssp.2016.08.019.

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