J 2017

Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry

FRANTA, Daniel, Minna Paula Katriina KOTILAINEN, Richard KRUMPOLEC and Ivan OHLÍDAL

Basic information

Original name

Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry

Authors

FRANTA, Daniel (203 Czech Republic, belonging to the institution), Minna Paula Katriina KOTILAINEN (246 Finland, belonging to the institution), Richard KRUMPOLEC (703 Slovakia, belonging to the institution) and Ivan OHLÍDAL (203 Czech Republic, belonging to the institution)

Edition

Applied Surface Science, AMSTERDAM, ELSEVIER SCIENCE BV, 2017, 0169-4332

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

Impact factor

Impact factor: 4.439

RIV identification code

RIV/00216224:14310/17:00097950

Organization unit

Faculty of Science

UT WoS

000408756700024

Keywords in English

Hafnia; Ellipsometry; Atomic layer deposition; Solar absorber

Tags

Tags

International impact, Reviewed
Změněno: 10/4/2018 11:43, Ing. Nicole Zrilić

Abstract

V originále

Hafnium oxide (HfO2) thin films could be potentially used as thermal diffusion barrier coatings for copper absorbers used in solar thermal collectors. Atomic layer deposition (ALD) was used to deposit thin, dense, non-columnar HfO2 films on copper sheets, which are established base materials for solar absorbers. The aim of this work is to find a simple and efficient method for quantitative characterization of thin hafnium oxide films deposited on imperfect rough copper sheets. The difference ellipsometry applied in infrared region was found to be a practical tool for non-destructive characterization of thin films deposited onto metal surfaces even when these surfaces are imperfect. The presented method enables us not only to identify the presence of hafnium oxide but also to perform quantitative characterization, i.e. to determine the thickness of the film. Moreover, a simple method, in which the thickness is determined from the height of the structure in the difference ellipsometric data, is presented. This method is demonstrated on HfO2 film with nominal thickness 60 nm deposited by ALD on copper cold-rolled sheet.

Links

LO1411, research and development project
Name: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)
Investor: Ministry of Education, Youth and Sports of the CR