Detailed Information on Publication Record
2017
Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry
FRANTA, Daniel, Minna Paula Katriina KOTILAINEN, Richard KRUMPOLEC and Ivan OHLÍDALBasic information
Original name
Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry
Authors
FRANTA, Daniel (203 Czech Republic, belonging to the institution), Minna Paula Katriina KOTILAINEN (246 Finland, belonging to the institution), Richard KRUMPOLEC (703 Slovakia, belonging to the institution) and Ivan OHLÍDAL (203 Czech Republic, belonging to the institution)
Edition
Applied Surface Science, AMSTERDAM, ELSEVIER SCIENCE BV, 2017, 0169-4332
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Netherlands
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 4.439
RIV identification code
RIV/00216224:14310/17:00097950
Organization unit
Faculty of Science
UT WoS
000408756700024
Keywords in English
Hafnia; Ellipsometry; Atomic layer deposition; Solar absorber
Tags
International impact, Reviewed
Změněno: 10/4/2018 11:43, Ing. Nicole Zrilić
Abstract
V originále
Hafnium oxide (HfO2) thin films could be potentially used as thermal diffusion barrier coatings for copper absorbers used in solar thermal collectors. Atomic layer deposition (ALD) was used to deposit thin, dense, non-columnar HfO2 films on copper sheets, which are established base materials for solar absorbers. The aim of this work is to find a simple and efficient method for quantitative characterization of thin hafnium oxide films deposited on imperfect rough copper sheets. The difference ellipsometry applied in infrared region was found to be a practical tool for non-destructive characterization of thin films deposited onto metal surfaces even when these surfaces are imperfect. The presented method enables us not only to identify the presence of hafnium oxide but also to perform quantitative characterization, i.e. to determine the thickness of the film. Moreover, a simple method, in which the thickness is determined from the height of the structure in the difference ellipsometric data, is presented. This method is demonstrated on HfO2 film with nominal thickness 60 nm deposited by ALD on copper cold-rolled sheet.
Links
LO1411, research and development project |
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