FRANTA, Daniel, Minna Paula Katriina KOTILAINEN, Richard KRUMPOLEC and Ivan OHLÍDAL. Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry. Applied Surface Science. AMSTERDAM: ELSEVIER SCIENCE BV, 2017, vol. 421, November, p. 420-423. ISSN 0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2016.12.164.
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Basic information
Original name Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry
Authors FRANTA, Daniel (203 Czech Republic, belonging to the institution), Minna Paula Katriina KOTILAINEN (246 Finland, belonging to the institution), Richard KRUMPOLEC (703 Slovakia, belonging to the institution) and Ivan OHLÍDAL (203 Czech Republic, belonging to the institution).
Edition Applied Surface Science, AMSTERDAM, ELSEVIER SCIENCE BV, 2017, 0169-4332.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Netherlands
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 4.439
RIV identification code RIV/00216224:14310/17:00097950
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1016/j.apsusc.2016.12.164
UT WoS 000408756700024
Keywords in English Hafnia; Ellipsometry; Atomic layer deposition; Solar absorber
Tags NZ, rivok
Tags International impact, Reviewed
Changed by Changed by: Ing. Nicole Zrilić, učo 240776. Changed: 10/4/2018 11:43.
Abstract
Hafnium oxide (HfO2) thin films could be potentially used as thermal diffusion barrier coatings for copper absorbers used in solar thermal collectors. Atomic layer deposition (ALD) was used to deposit thin, dense, non-columnar HfO2 films on copper sheets, which are established base materials for solar absorbers. The aim of this work is to find a simple and efficient method for quantitative characterization of thin hafnium oxide films deposited on imperfect rough copper sheets. The difference ellipsometry applied in infrared region was found to be a practical tool for non-destructive characterization of thin films deposited onto metal surfaces even when these surfaces are imperfect. The presented method enables us not only to identify the presence of hafnium oxide but also to perform quantitative characterization, i.e. to determine the thickness of the film. Moreover, a simple method, in which the thickness is determined from the height of the structure in the difference ellipsometric data, is presented. This method is demonstrated on HfO2 film with nominal thickness 60 nm deposited by ALD on copper cold-rolled sheet.
Links
LO1411, research and development projectName: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)
Investor: Ministry of Education, Youth and Sports of the CR
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