| RAUD, Jüri, Indrek JÖGI, L. MATISEN, Zdeněk NAVRÁTIL, R. TALVISTE, David TRUNEC and J. AARIK. Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs. Journal of Physics D: Applied Physics. Bristol, England: IOP Publishing Ltd., 2017, vol. 50, No 50, p. 505201-505210. ISSN 0022-3727. Available from: https://dx.doi.org/10.1088/1361-6463/aa9635. |
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@article{1399333,
author = {Raud, Jüri and Jögi, Indrek and Matisen, L. and Navrátil, Zdeněk and Talviste, R. and Trunec, David and Aarik, J.},
article_location = {Bristol, England},
article_number = {50},
doi = {http://dx.doi.org/10.1088/1361-6463/aa9635},
keywords = {RF discharge; plasma characteristics; GaAs nitridation},
language = {eng},
issn = {0022-3727},
journal = {Journal of Physics D: Applied Physics},
title = {Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs},
volume = {50},
year = {2017}
}
TY - JOUR
ID - 1399333
AU - Raud, Jüri - Jögi, Indrek - Matisen, L. - Navrátil, Zdeněk - Talviste, R. - Trunec, David - Aarik, J.
PY - 2017
TI - Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs
JF - Journal of Physics D: Applied Physics
VL - 50
IS - 50
SP - 505201
EP - 505201
PB - IOP Publishing Ltd.
SN - 00223727
KW - RF discharge
KW - plasma characteristics
KW - GaAs nitridation
N2 - This work characterizes the production and destruction of nitrogen and hydrogen atoms in RF capacitively coupled middle-pressure discharge in argon/nitrogen/hydrogen mixtures. Input power, electron concentration, electric field strength and mean electron energy were determined on the basis of electrical measurements. Gas temperature and concentration of Ar atoms in 1s states were determined from spectral measurements. On the basis of experimentally determined plasma characteristics, main production and loss mechanisms of H and N atoms were discussed. The plasma produced radicals were applied for the nitridation and oxide reduction of gallium arsenide in the afterglow region of discharge. After plasma treatment the GaAs samples were analyzed using x-ray photoelectron spectroscopy (XPS) technique. Successful nitridation of GaAs sample was obtained in the case of Ar/5% N-2 discharge. In this gas mixture the N atoms were generated via dissociative recombination of N-2(+) created by charge transfer from Ar+. The treatment in Ar/5% N-2/1% H-2 mixture resulted in the reduction of oxide signals in the XPS spectra. Negligible formation of GaN in the latter mixture was connected with reduced concentration of N atoms, which was, in turn, due to less efficient mechanism of N atom production (electron impact dissociation of N-2 molecules) and additional loss channel in reaction with H-2.
ER -
RAUD, Jüri, Indrek JÖGI, L. MATISEN, Zdeněk NAVRÁTIL, R. TALVISTE, David TRUNEC and J. AARIK. Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs. \textit{Journal of Physics D: Applied Physics}. Bristol, England: IOP Publishing Ltd., 2017, vol.~50, No~50, p.~505201-505210. ISSN~0022-3727. Available from: https://dx.doi.org/10.1088/1361-6463/aa9635.
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