Detailed Information on Publication Record
2017
Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs
RAUD, Jüri, Indrek JÖGI, L. MATISEN, Zdeněk NAVRÁTIL, R. TALVISTE et. al.Basic information
Original name
Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs
Name in Czech
Charakterizace RF výboje v Ar/N2/H2 za středního tlaku a aplikace dohasínající oblasti pro nitridaci GaAs
Authors
RAUD, Jüri (233 Estonia, belonging to the institution), Indrek JÖGI (233 Estonia), L. MATISEN (233 Estonia), Zdeněk NAVRÁTIL (203 Czech Republic, belonging to the institution), R. TALVISTE (233 Estonia), David TRUNEC (203 Czech Republic, guarantor, belonging to the institution) and J. AARIK (233 Estonia)
Edition
Journal of Physics D: Applied Physics, Bristol, England, IOP Publishing Ltd. 2017, 0022-3727
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10305 Fluids and plasma physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 2.373
RIV identification code
RIV/00216224:14310/17:00098826
Organization unit
Faculty of Science
UT WoS
000415951300001
Keywords (in Czech)
RF výboj; charakterizace plazmatuů nitridace GaAs
Keywords in English
RF discharge; plasma characteristics; GaAs nitridation
Tags
International impact, Reviewed
Změněno: 5/4/2018 10:08, Ing. Nicole Zrilić
Abstract
V originále
This work characterizes the production and destruction of nitrogen and hydrogen atoms in RF capacitively coupled middle-pressure discharge in argon/nitrogen/hydrogen mixtures. Input power, electron concentration, electric field strength and mean electron energy were determined on the basis of electrical measurements. Gas temperature and concentration of Ar atoms in 1s states were determined from spectral measurements. On the basis of experimentally determined plasma characteristics, main production and loss mechanisms of H and N atoms were discussed. The plasma produced radicals were applied for the nitridation and oxide reduction of gallium arsenide in the afterglow region of discharge. After plasma treatment the GaAs samples were analyzed using x-ray photoelectron spectroscopy (XPS) technique. Successful nitridation of GaAs sample was obtained in the case of Ar/5% N-2 discharge. In this gas mixture the N atoms were generated via dissociative recombination of N-2(+) created by charge transfer from Ar+. The treatment in Ar/5% N-2/1% H-2 mixture resulted in the reduction of oxide signals in the XPS spectra. Negligible formation of GaN in the latter mixture was connected with reduced concentration of N atoms, which was, in turn, due to less efficient mechanism of N atom production (electron impact dissociation of N-2 molecules) and additional loss channel in reaction with H-2.
Links
| LO1411, research and development project |
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