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@article{1399383,
author = {Wang, Chennan and Caha, Ondřej and Münz, Filip and Kostelník, Petr and Novák, Tomáš and Humlíček, Josef},
article_location = {Amsterdam},
article_number = {November},
doi = {http://dx.doi.org/10.1016/j.apsusc.2017.02.056},
keywords = {Gallium nitride; Alloy; Semiconductor; Thin film; Wafer; MOCVD; Silicon; Infrared spectroscopy; Phonon; Ellipsometry; XRD; Raman},
language = {eng},
issn = {0169-4332},
journal = {Applied Surface Science},
title = {Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures},
url = {http://www.sciencedirect.com/science/article/pii/S0169433217304075},
volume = {421},
year = {2017}
}
TY - JOUR
ID - 1399383
AU - Wang, Chennan - Caha, Ondřej - Münz, Filip - Kostelník, Petr - Novák, Tomáš - Humlíček, Josef
PY - 2017
TI - Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures
JF - Applied Surface Science
VL - 421
IS - November
SP - 859-865
EP - 859-865
PB - Elsevier Science
SN - 01694332
KW - Gallium nitride
KW - Alloy
KW - Semiconductor
KW - Thin film
KW - Wafer
KW - MOCVD
KW - Silicon
KW - Infrared spectroscopy
KW - Phonon
KW - Ellipsometry
KW - XRD
KW - Raman
UR - http://www.sciencedirect.com/science/article/pii/S0169433217304075
N2 - We report an investigation of the optical and structural properties of wurtzite phase AlxGa1-xN/AlN structure grown on Si(111) within the compositional range of 0 <= x <= 1. The study focuses on providing essential physical quantities for the fabrication process control, namely the composition dependence of phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry, Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis. Based on the high quality and nearly strain-free AlxGa1-xN/AlN double layer samples, we determined the calibration curve for the A(1)(LO) phonon mode. We have also constructed the ellipsometry model which uses a-priori knowledge of experimentally measured A(1)(TO) phonon mode frequencies. From the best model fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropic refractive indices of the AlxGa1-xN alloys with a very satisfactory accuracy. (C) 2017 Elsevier B.V. All rights reserved.
ER -
WANG, Chennan, Ondřej CAHA, Filip MÜNZ, Petr KOSTELNÍK, Tomáš NOVÁK and Josef HUMLÍČEK. Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures. \textit{Applied Surface Science}. Amsterdam: Elsevier Science, 2017, vol.~421, November, p.~859-865. ISSN~0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2017.02.056.
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