Mid-infrared ellipsometry, Raman and X-ray diffraction studies
of AlxGa1-xN/AlN/Si structures

J 2017

Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures

WANG, Chennan, Ondřej CAHA, Filip MÜNZ, Petr KOSTELNÍK, Tomáš NOVÁK et. al.

Basic information

Original name

Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures

Name in Czech

Studie vrstev AlxGa1-xN/AlN/Si pomocí infračervené elipsometrie, Ramanova rozptylu a rtg difrakce

Authors

WANG, Chennan (156 China, guarantor, belonging to the institution), Ondřej CAHA (203 Czech Republic, belonging to the institution), Filip MÜNZ (203 Czech Republic, belonging to the institution), Petr KOSTELNÍK (203 Czech Republic), Tomáš NOVÁK (203 Czech Republic) and Josef HUMLÍČEK (203 Czech Republic, belonging to the institution)

Edition

Applied Surface Science, Amsterdam, Elsevier Science, 2017, 0169-4332

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 4.439

RIV identification code

RIV/00216224:14310/17:00094403

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1016/j.apsusc.2017.02.056

UT WoS

000408756700093

Keywords in English

Gallium nitride; Alloy; Semiconductor; Thin film; Wafer; MOCVD; Silicon; Infrared spectroscopy; Phonon; Ellipsometry; XRD; Raman

Abstract

V originále

We report an investigation of the optical and structural properties of wurtzite phase AlxGa1-xN/AlN structure grown on Si(111) within the compositional range of 0 <= x <= 1. The study focuses on providing essential physical quantities for the fabrication process control, namely the composition dependence of phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry, Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis. Based on the high quality and nearly strain-free AlxGa1-xN/AlN double layer samples, we determined the calibration curve for the A(1)(LO) phonon mode. We have also constructed the ellipsometry model which uses a-priori knowledge of experimentally measured A(1)(TO) phonon mode frequencies. From the best model fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropic refractive indices of the AlxGa1-xN alloys with a very satisfactory accuracy. (C) 2017 Elsevier B.V. All rights reserved.

Links

TH01011284, research and development project

Name: Nové polovodičové materiály a součástky s velkou šířkou zakázaného pásu

Investor: Technology Agency of the Czech Republic

Citovat

WANG, Chennan, Ondřej CAHA, Filip MÜNZ, Petr KOSTELNÍK, Tomáš NOVÁK and Josef HUMLÍČEK. Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures. Applied Surface Science. Amsterdam: Elsevier Science, 2017, vol. 421, November, p. 859-865. ISSN 0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2017.02.056.

@article{1399383,
   author = {Wang, Chennan and Caha, Ondřej and Münz, Filip and Kostelník, Petr and Novák, Tomáš and Humlíček, Josef},
   article_location = {Amsterdam},
   article_number = {November},
   doi = {http://dx.doi.org/10.1016/j.apsusc.2017.02.056},
   keywords = {Gallium nitride; Alloy; Semiconductor; Thin film; Wafer; MOCVD; Silicon; Infrared spectroscopy; Phonon; Ellipsometry; XRD; Raman},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures},
   url = {http://www.sciencedirect.com/science/article/pii/S0169433217304075},
   volume = {421},
   year = {2017}
}

TY  - JOUR
ID  - 1399383
AU  - Wang, Chennan - Caha, Ondřej - Münz, Filip - Kostelník, Petr - Novák, Tomáš - Humlíček, Josef
PY  - 2017
TI  - Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures
JF  - Applied Surface Science
VL  - 421
IS  - November
SP  - 859-865
EP  - 859-865
PB  - Elsevier Science
SN  - 01694332
KW  - Gallium nitride
KW  - Alloy
KW  - Semiconductor
KW  - Thin film
KW  - Wafer
KW  - MOCVD
KW  - Silicon
KW  - Infrared spectroscopy
KW  - Phonon
KW  - Ellipsometry
KW  - XRD
KW  - Raman
UR  - http://www.sciencedirect.com/science/article/pii/S0169433217304075
N2  - We report an investigation of the optical and structural properties of wurtzite phase AlxGa1-xN/AlN structure grown on Si(111) within the compositional range of 0 <= x <= 1. The study focuses on providing essential physical quantities for the fabrication process control, namely the composition dependence of phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry, Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis. Based on the high quality and nearly strain-free AlxGa1-xN/AlN double layer samples, we determined the calibration curve for the A(1)(LO) phonon mode. We have also constructed the ellipsometry model which uses a-priori knowledge of experimentally measured A(1)(TO) phonon mode frequencies. From the best model fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropic refractive indices of the AlxGa1-xN alloys with a very satisfactory accuracy. (C) 2017 Elsevier B.V. All rights reserved.
ER  -

WANG, Chennan, Ondřej CAHA, Filip MÜNZ, Petr KOSTELNÍK, Tomáš NOVÁK and Josef HUMLÍČEK. Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures. \textit{Applied Surface Science}. Amsterdam: Elsevier Science, 2017, vol.~421, November, p.~859-865. ISSN~0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2017.02.056.

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