| GABLECH, I., Ondřej CAHA, V. SVATOS, J. PEKAREK, P. NEUZIL and Tomáš ŠIKOLA. Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source. Thin Solid Films. Lausanne: Elsevier science, 2017, vol. 638, September, p. 57-62. ISSN 0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2017.07.039. |
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@article{1403949,
author = {Gablech, I. and Caha, Ondřej and Svatos, V. and Pekarek, J. and Neuzil, P. and Šikola, Tomáš},
article_location = {Lausanne},
article_number = {September},
doi = {http://dx.doi.org/10.1016/j.tsf.2017.07.039},
keywords = {Ion-beam sputtering deposition; Kaufman ion-beam source; Titanium thin film; [001] preferential orientation; Residual stress; Rocking curve},
language = {eng},
issn = {0040-6090},
journal = {Thin Solid Films},
title = {Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source},
volume = {638},
year = {2017}
}
TY - JOUR
ID - 1403949
AU - Gablech, I. - Caha, Ondřej - Svatos, V. - Pekarek, J. - Neuzil, P. - Šikola, Tomáš
PY - 2017
TI - Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source
JF - Thin Solid Films
VL - 638
IS - September
SP - 57-62
EP - 57-62
PB - Elsevier science
SN - 00406090
KW - Ion-beam sputtering deposition
KW - Kaufman ion-beam source
KW - Titanium thin film
KW - [001] preferential orientation
KW - Residual stress
KW - Rocking curve
N2 - We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (1) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using X-ray diffraction and X-ray reflectivity measurements. We showed that the Ti film deposited at T approximate to 273 degrees C was stress free with corresponding lattice parameters.ao and co of (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c-axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from 0.58 nm to 0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems. (C) 2017 Elsevier B.V. All rights reserved.
ER -
GABLECH, I., Ondřej CAHA, V. SVATOS, J. PEKAREK, P. NEUZIL and Tomáš ŠIKOLA. Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source. \textit{Thin Solid Films}. Lausanne: Elsevier science, 2017, vol.~638, September, p.~57-62. ISSN~0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2017.07.039.
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