OHLÍDAL, Ivan, Daniel FRANTA and David NEČAS. Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness. Applied Surface Science. AMSTERDAM, NETHERLANDS: Elsevier Science BV, 2017, vol. 421, November, p. 687-696. ISSN 0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2016.10.186.
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Basic information
Original name Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness
Authors OHLÍDAL, Ivan (203 Czech Republic, guarantor, belonging to the institution), Daniel FRANTA (203 Czech Republic, belonging to the institution) and David NEČAS (203 Czech Republic, belonging to the institution).
Edition Applied Surface Science, AMSTERDAM, NETHERLANDS, Elsevier Science BV, 2017, 0169-4332.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Netherlands
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 4.439
RIV identification code RIV/00216224:14310/17:00094430
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1016/j.apsusc.2016.10.186
UT WoS 000408756700066
Keywords in English Optical constants;Ellipsometry;Spectrophotometry;Thin films;Roughness;Non-uniformity
Tags NZ, rivok
Tags International impact, Reviewed
Changed by Changed by: Ing. Nicole Zrilić, učo 240776. Changed: 3/4/2018 13:55.
Abstract
In this paper epitaxial ZnSe thin films prepared by molecular beam epitaxy onto GaAs single crystal substrates exhibiting two defects, i.e. boundary roughness and thickness non-uniformity, are optically characterized using a combination of spectroscopic ellipsometry and near-normal spectroscopic reflectometry. The influence of boundary roughness is included into optical quantity formulae by the combination of the scalar diffraction theory and Rayleigh-Rice theory. Thickness non-uniformity is incorporated by means of averaging the elements of the unnormalized Mueller matrices. The universal dispersion model of the optical constants of the ZnSe thin films based on parametrization of the joint density of electronic states is used. Very thin overalyers modeled by rough thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe thin films. The spectral dependencies of the optical constants of the ZnSe thin films are determined within the wide spectral region (0.6–8.7 eV). Moreover, the mean thickness of the ZnSe thin films and thickness of overlayers are determined together with the other structural parameters characterizing the defects. The values of roughness parameters, determined by the optical method, are verified by a comparison with results achieved by atomic force microscopy. It is also shown that approximations of the local reflection coefficients presented are usable for processing the experimental data.
Links
ED2.1.00/03.0086, research and development projectName: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy
LO1411, research and development projectName: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)
Investor: Ministry of Education, Youth and Sports of the CR
LQ1601, research and development projectName: CEITEC 2020 (Acronym: CEITEC2020)
Investor: Ministry of Education, Youth and Sports of the CR
TA02010784, research and development projectName: Optimalizace vrstevnatých systémů používaných v optickém průmyslu
Investor: Technology Agency of the Czech Republic
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