Ellipsometric and reflectometric characterization of thin films
exhibiting thickness non-uniformity and boundary roughness

J 2017

Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness

OHLÍDAL, Ivan, Daniel FRANTA and David NEČAS

Basic information

Original name

Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness

Authors

OHLÍDAL, Ivan (203 Czech Republic, guarantor, belonging to the institution), Daniel FRANTA (203 Czech Republic, belonging to the institution) and David NEČAS (203 Czech Republic, belonging to the institution)

Edition

Applied Surface Science, AMSTERDAM, NETHERLANDS, Elsevier Science BV, 2017, 0169-4332

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 4.439

RIV identification code

RIV/00216224:14310/17:00094430

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1016/j.apsusc.2016.10.186

UT WoS

000408756700066

Keywords in English

Optical constants;Ellipsometry;Spectrophotometry;Thin films;Roughness;Non-uniformity

Abstract

V originále

In this paper epitaxial ZnSe thin films prepared by molecular beam epitaxy onto GaAs single crystal substrates exhibiting two defects, i.e. boundary roughness and thickness non-uniformity, are optically characterized using a combination of spectroscopic ellipsometry and near-normal spectroscopic reflectometry. The influence of boundary roughness is included into optical quantity formulae by the combination of the scalar diffraction theory and Rayleigh-Rice theory. Thickness non-uniformity is incorporated by means of averaging the elements of the unnormalized Mueller matrices. The universal dispersion model of the optical constants of the ZnSe thin films based on parametrization of the joint density of electronic states is used. Very thin overalyers modeled by rough thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe thin films. The spectral dependencies of the optical constants of the ZnSe thin films are determined within the wide spectral region (0.6–8.7 eV). Moreover, the mean thickness of the ZnSe thin films and thickness of overlayers are determined together with the other structural parameters characterizing the defects. The values of roughness parameters, determined by the optical method, are verified by a comparison with results achieved by atomic force microscopy. It is also shown that approximations of the local reflection coefficients presented are usable for processing the experimental data.

Links

ED2.1.00/03.0086, research and development project

Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, research and development project

Name: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)

Investor: Ministry of Education, Youth and Sports of the CR

LQ1601, research and development project

Name: CEITEC 2020 (Acronym: CEITEC2020)

Investor: Ministry of Education, Youth and Sports of the CR

TA02010784, research and development project

Name: Optimalizace vrstevnatých systémů používaných v optickém průmyslu

Investor: Technology Agency of the Czech Republic

Citovat

OHLÍDAL, Ivan, Daniel FRANTA and David NEČAS. Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness. Applied Surface Science. AMSTERDAM, NETHERLANDS: Elsevier Science BV, 2017, vol. 421, November, p. 687-696. ISSN 0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2016.10.186.

@article{1409184,
   author = {Ohlídal, Ivan and Franta, Daniel and Nečas, David},
   article_location = {AMSTERDAM, NETHERLANDS},
   article_number = {November},
   doi = {http://dx.doi.org/10.1016/j.apsusc.2016.10.186},
   keywords = {Optical constants;Ellipsometry;Spectrophotometry;Thin films;Roughness;Non-uniformity},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness},
   url = {https://www.sciencedirect.com/science/article/pii/S0169433216323224},
   volume = {421},
   year = {2017}
}

TY  - JOUR
ID  - 1409184
AU  - Ohlídal, Ivan - Franta, Daniel - Nečas, David
PY  - 2017
TI  - Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness
JF  - Applied Surface Science
VL  - 421
IS  - November
SP  - 687-696
EP  - 687-696
PB  - Elsevier Science BV
SN  - 01694332
KW  - Optical constants;Ellipsometry;Spectrophotometry;Thin films;Roughness;Non-uniformity
UR  - https://www.sciencedirect.com/science/article/pii/S0169433216323224
N2  - In this paper epitaxial ZnSe thin films prepared by molecular beam epitaxy onto GaAs single crystal substrates exhibiting two defects, i.e. boundary roughness and thickness non-uniformity, are optically characterized using a combination of spectroscopic ellipsometry and near-normal spectroscopic reflectometry. The influence of boundary roughness is included into optical quantity formulae by the combination of the scalar diffraction theory and Rayleigh-Rice theory. Thickness non-uniformity is incorporated by means of averaging the elements of the unnormalized Mueller matrices. The universal dispersion model of the optical constants of the ZnSe thin films based on parametrization of the joint density of electronic states is used. Very thin overalyers modeled by rough thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe thin films. The spectral dependencies of the optical constants of the ZnSe thin films are determined within the wide spectral region (0.6–8.7 eV). Moreover, the mean thickness of the ZnSe thin films and thickness of overlayers are determined together with the other structural parameters characterizing the defects. The values of roughness parameters, determined by the optical method, are verified by a comparison with results achieved by atomic force microscopy. It is also shown that approximations of the local reflection coefficients presented are usable for processing the experimental data.
ER  -

OHLÍDAL, Ivan, Daniel FRANTA and David NEČAS. Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness. \textit{Applied Surface Science}. AMSTERDAM, NETHERLANDS: Elsevier Science BV, 2017, vol.~421, November, p.~687-696. ISSN~0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2016.10.186.

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