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@article{1409778,
author = {Kobayashi, Eiji and Boccard, Mathieu and Jeangros, Quentin and Rodkey, Nathan and Vresilovic, Daniel and HesslerandWyser, Aïcha and Döbeli, Max and Franta, Daniel and De Wolf, Stefaan and MoralesandMasis, Monica and Ballif, Christophe},
article_number = {2},
doi = {http://dx.doi.org/10.1116/1.5018800},
keywords = {Chemical compounds; Optical properties; Thin films; Electron energy loss spectroscopy; Physics of gases},
language = {eng},
issn = {0734-2101},
journal = {Journal of Vacuum Science and Technology A},
title = {Amorphous gallium oxide grown by low-temperature PECVD},
url = {http://dx.doi.org/10.1116/1.5018800},
volume = {36},
year = {2018}
}
TY - JOUR
ID - 1409778
AU - Kobayashi, Eiji - Boccard, Mathieu - Jeangros, Quentin - Rodkey, Nathan - Vresilovic, Daniel - Hessler-Wyser, Aïcha - Döbeli, Max - Franta, Daniel - De Wolf, Stefaan - Morales-Masis, Monica - Ballif, Christophe
PY - 2018
TI - Amorphous gallium oxide grown by low-temperature PECVD
JF - Journal of Vacuum Science and Technology A
VL - 36
IS - 2
SP - 1-7
EP - 1-7
PB - AIP
SN - 07342101
KW - Chemical compounds
KW - Optical properties
KW - Thin films
KW - Electron energy loss spectroscopy
KW - Physics of gases
UR - http://dx.doi.org/10.1116/1.5018800
N2 - Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, theauthors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200°C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
ER -
KOBAYASHI, Eiji, Mathieu BOCCARD, Quentin JEANGROS, Nathan RODKEY, Daniel VRESILOVIC, Aïcha HESSLER-WYSER, Max DÖBELI, Daniel FRANTA, Stefaan DE WOLF, Monica MORALES-MASIS and Christophe BALLIF. Amorphous gallium oxide grown by low-temperature PECVD. \textit{Journal of Vacuum Science and Technology A}. AIP, 2018, vol.~36, No~2, p.~1-7. ISSN~0734-2101. Available from: https://dx.doi.org/10.1116/1.5018800.
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