Liquid assisted plasma enhanced chemical vapour deposition with
a non-thermal plasma jet at atmospheric pressure

J 2017

Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

SCHÄFER, Jan, Katja FRICKE, František MIKA, Zuzana POKORNÁ, Lenka ZAJÍČKOVÁ et. al.

Basic information

Original name

Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

Authors

SCHÄFER, Jan (203 Czech Republic), Katja FRICKE (276 Germany), František MIKA (203 Czech Republic), Zuzana POKORNÁ (203 Czech Republic), Lenka ZAJÍČKOVÁ (203 Czech Republic, guarantor, belonging to the institution) and Rudiger FOEST (276 Germany)

Edition

Thin Solid Films, Lausanne, Elsevier science, 2017, 0040-6090

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

United Kingdom of Great Britain and Northern Ireland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 1.939

RIV identification code

RIV/00216224:14740/17:00100437

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1016/j.tsf.2016.09.022

UT WoS

000401080700010

Keywords in English

Plasma jet; Liquid assisted plasma enhanced chemical vapour deposition; Silicon oxide; Hexamethyldisiloxane; Octamethyltetrasiloxane; Tetrakis(trimethylsilyloxy)silane

Abstract

V originále

The present study introduces a process for the synthesis of functional films onto substrates directly from the liquid phase. The reported method is based on the initialization of the synthesis by means of an atmospheric pressure plasma jet operating with argon above a thin liquid film of the starting material. The process is demonstrated by the formation of a thin, solid SiOx film from siloxane-based liquid precursors. Changes in the chemical properties of the precursor were studied in-situ during the polymerization process on the diamond crystal by using Fourier transform infrared spectroscopy The elemental composition of the SiOxCy films was analyzed by X-ray photoelectron spectroscopy (XPS). Furthermore, XPS was applied to study the effect of post-annealing processes on the composition of the films. The obtained deposits exhibit a low concentration of carbon groups. The amount of hydroxyl groups and interstitial water can be reduced significantly by post-process annealing of the films. (C) 2016 The Author(s). Published by Elsevier B.V.

Links

LQ1601, research and development project

Name: CEITEC 2020 (Acronym: CEITEC2020)

Investor: Ministry of Education, Youth and Sports of the CR

Files attached

17schafer_tsf_liquidPECVD.pdf

Request the author's version of the file

Citovat

SCHÄFER, Jan, Katja FRICKE, František MIKA, Zuzana POKORNÁ, Lenka ZAJÍČKOVÁ and Rudiger FOEST. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure. Thin Solid Films. Lausanne: Elsevier science, 2017, vol. 630, MAY, p. 71-78. ISSN 0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2016.09.022.

@article{1411912,
   author = {Schäfer, Jan and Fricke, Katja and Mika, František and Pokorná, Zuzana and Zajíčková, Lenka and Foest, Rudiger},
   article_location = {Lausanne},
   article_number = {MAY},
   doi = {http://dx.doi.org/10.1016/j.tsf.2016.09.022},
   keywords = {Plasma jet; Liquid assisted plasma enhanced chemical vapour deposition; Silicon oxide; Hexamethyldisiloxane; Octamethyltetrasiloxane; Tetrakis(trimethylsilyloxy)silane},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure},
   url = {https://www.sciencedirect.com/science/article/pii/S0040609016305302?via%3Dihub},
   volume = {630},
   year = {2017}
}

TY  - JOUR
ID  - 1411912
AU  - Schäfer, Jan - Fricke, Katja - Mika, František - Pokorná, Zuzana - Zajíčková, Lenka - Foest, Rudiger
PY  - 2017
TI  - Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure
JF  - Thin Solid Films
VL  - 630
IS  - MAY
SP  - 71-78
EP  - 71-78
PB  - Elsevier science
SN  - 00406090
KW  - Plasma jet
KW  - Liquid assisted plasma enhanced chemical vapour deposition
KW  - Silicon oxide
KW  - Hexamethyldisiloxane
KW  - Octamethyltetrasiloxane
KW  - Tetrakis(trimethylsilyloxy)silane
UR  - https://www.sciencedirect.com/science/article/pii/S0040609016305302?via%3Dihub
L2  - https://www.sciencedirect.com/science/article/pii/S0040609016305302?via%3Dihub
N2  - The present study introduces a process for the synthesis of functional films onto substrates directly from the liquid phase. The reported method is based on the initialization of the synthesis by means of an atmospheric pressure plasma jet operating with argon above a thin liquid film of the starting material. The process is demonstrated by the formation of a thin, solid SiOx film from siloxane-based liquid precursors. Changes in the chemical properties of the precursor were studied in-situ during the polymerization process on the diamond crystal by using Fourier transform infrared spectroscopy The elemental composition of the SiOxCy films was analyzed by X-ray photoelectron spectroscopy (XPS). Furthermore, XPS was applied to study the effect of post-annealing processes on the composition of the films. The obtained deposits exhibit a low concentration of carbon groups. The amount of hydroxyl groups and interstitial water can be reduced significantly by post-process annealing of the films. (C) 2016 The Author(s). Published by Elsevier B.V.
ER  -

SCHÄFER, Jan, Katja FRICKE, František MIKA, Zuzana POKORNÁ, Lenka ZAJÍČKOVÁ and Rudiger FOEST. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure. \textit{Thin Solid Films}. Lausanne: Elsevier science, 2017, vol.~630, MAY, p.~71-78. ISSN~0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2016.09.022.

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