| COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO, Josef HUMLÍČEK a A.S. BROWN. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. Online. AIP Advances. MELVILLE: AMER INST PHYSICS, 2017, roč. 7, č. 7, s. nestránkováno, 6 s. ISSN 2158-3226. Dostupné z: https://dx.doi.org/10.1063/1.4986751. [citováno 2024-04-24] |
Další formáty:
BibTeX
LaTeX
RIS
@article{1411940,
author = {Collar, K. and Li, J. and Jiao, W. and Guan, Y. and Losurdo, M. and Humlíček, Josef and Brown, A.S.},
article_location = {MELVILLE},
article_number = {7},
doi = {http://dx.doi.org/10.1063/1.4986751},
keywords = {MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GAAS1-XBIX; INTERFACE; GROWTH; GAP},
language = {eng},
issn = {2158-3226},
journal = {AIP Advances},
title = {Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy},
url = {https://aip.scitation.org/doi/10.1063/1.4986751},
volume = {7},
year = {2017}
}
TY - JOUR
ID - 1411940
AU - Collar, K. - Li, J. - Jiao, W. - Guan, Y. - Losurdo, M. - Humlíček, Josef - Brown, A.S.
PY - 2017
TI - Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy
JF - AIP Advances
VL - 7
IS - 7
SP - nestránkováno
EP - nestránkováno
PB - AMER INST PHYSICS
SN - 21583226
KW - MOLECULAR-BEAM EPITAXY
KW - TEMPERATURE-DEPENDENCE
KW - GAAS1-XBIX
KW - INTERFACE
KW - GROWTH
KW - GAP
UR - https://aip.scitation.org/doi/10.1063/1.4986751
N2 - We investigate the change of the valence band energy of GaAs1-xBix as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that similar to 75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.
ER -
COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO, Josef HUMLÍČEK a A.S. BROWN. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. Online. \textit{AIP Advances}. MELVILLE: AMER INST PHYSICS, 2017, roč.~7, č.~7, s.~nestránkováno, 6 s. ISSN~2158-3226. Dostupné z: https://dx.doi.org/10.1063/1.4986751. [citováno 2024-04-24]
|
