| MEDUŇA, Mojmír, Thomas KREILIGER, Marco MAUCERI, Marco PUGLISI, Fulvio MANCARELLA, Francesco LA VIA, Danilo CRIPPA, Leo MIGLIO and Hans VON KÄNEL. X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers. Journal of Crystal Growth. Amsterdam: Elsevier, 2019, vol. 507, 1 February 2019, p. 70-76. ISSN 0022-0248. Available from: https://dx.doi.org/10.1016/j.jcrysgro.2018.10.046. |
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@article{1484971,
author = {Meduňa, Mojmír and Kreiliger, Thomas and Mauceri, Marco and Puglisi, Marco and Mancarella, Fulvio and La Via, Francesco and Crippa, Danilo and Miglio, Leo and von Känel, Hans},
article_location = {Amsterdam},
article_number = {1 February 2019},
doi = {http://dx.doi.org/10.1016/j.jcrysgro.2018.10.046},
keywords = {Semiconducting silicon compounds; Carbides; High resolution X-ray diffraction; Planar defects; Low dimensional structures},
language = {eng},
issn = {0022-0248},
journal = {Journal of Crystal Growth},
title = {X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers},
url = {https://www.sciencedirect.com/science/article/pii/S0022024818305384?via%3Dihub},
volume = {507},
year = {2019}
}
TY - JOUR
ID - 1484971
AU - Meduňa, Mojmír - Kreiliger, Thomas - Mauceri, Marco - Puglisi, Marco - Mancarella, Fulvio - La Via, Francesco - Crippa, Danilo - Miglio, Leo - von Känel, Hans
PY - 2019
TI - X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers
JF - Journal of Crystal Growth
VL - 507
IS - 1 February 2019
SP - 70-76
EP - 70-76
PB - Elsevier
SN - 00220248
KW - Semiconducting silicon compounds
KW - Carbides
KW - High resolution X-ray diffraction
KW - Planar defects
KW - Low dimensional structures
UR - https://www.sciencedirect.com/science/article/pii/S0022024818305384?via%3Dihub
L2 - https://www.sciencedirect.com/science/article/pii/S0022024818305384?via%3Dihub
N2 - We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0].
ER -
MEDUŇA, Mojmír, Thomas KREILIGER, Marco MAUCERI, Marco PUGLISI, Fulvio MANCARELLA, Francesco LA VIA, Danilo CRIPPA, Leo MIGLIO and Hans VON KÄNEL. X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers. \textit{Journal of Crystal Growth}. Amsterdam: Elsevier, 2019, vol.~507, 1 February 2019, p.~70-76. ISSN~0022-0248. Available from: https://dx.doi.org/10.1016/j.jcrysgro.2018.10.046.
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