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@article{1486989,
author = {Hackl, Florian and Grydlik, Martyna and Klenovský, Petr and Schaeffler, Friedrich and Fromherz, Thomas and Brehm, Moritz},
article_number = {6},
doi = {http://dx.doi.org/10.1002/andp.201800259},
keywords = {SiGe/Si;kvantove tecky;rekombinacni procesy;kp teorie},
language = {eng},
issn = {0003-3804},
journal = {Annalen der Physik (Berlin)},
title = {Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots},
url = {https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.201800259},
volume = {531},
year = {2019}
}
TY - JOUR
ID - 1486989
AU - Hackl, Florian - Grydlik, Martyna - Klenovský, Petr - Schaeffler, Friedrich - Fromherz, Thomas - Brehm, Moritz
PY - 2019
TI - Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots
JF - Annalen der Physik (Berlin)
VL - 531
IS - 6
SP - 1-12
EP - 1-12
SN - 00033804
KW - SiGe/Si;kvantove tecky;rekombinacni procesy;kp teorie
UR - https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.201800259
L2 - https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.201800259
N2 - In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type-II self-assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion-shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier-recombination paths. By using high-energy photons for PL excitation, electron-hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture-, loss- and recombination-dynamics to PL time-decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture-, excitonic-emission-, and Auger-recombination rates in this type-II nano-system.
ER -
HACKL, Florian, Martyna GRYDLIK, Petr KLENOVSKÝ, Friedrich SCHAEFFLER, Thomas FROMHERZ and Moritz BREHM. Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots. \textit{Annalen der Physik (Berlin)}. 2019, vol.~531, No~6, p.~1-12. ISSN~0003-3804. Available from: https://dx.doi.org/10.1002/andp.201800259.
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