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@article{1486989, author = {Hackl, Florian and Grydlik, Martyna and Klenovský, Petr and Schaeffler, Friedrich and Fromherz, Thomas and Brehm, Moritz}, article_number = {6}, doi = {http://dx.doi.org/10.1002/andp.201800259}, keywords = {SiGe/Si;kvantove tecky;rekombinacni procesy;kp teorie}, language = {eng}, issn = {0003-3804}, journal = {Annalen der Physik (Berlin)}, title = {Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots}, url = {https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.201800259}, volume = {531}, year = {2019} }
TY - JOUR ID - 1486989 AU - Hackl, Florian - Grydlik, Martyna - Klenovský, Petr - Schaeffler, Friedrich - Fromherz, Thomas - Brehm, Moritz PY - 2019 TI - Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots JF - Annalen der Physik (Berlin) VL - 531 IS - 6 SP - 1-12 EP - 1-12 SN - 00033804 KW - SiGe/Si;kvantove tecky;rekombinacni procesy;kp teorie UR - https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.201800259 L2 - https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.201800259 N2 - In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type-II self-assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion-shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier-recombination paths. By using high-energy photons for PL excitation, electron-hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture-, loss- and recombination-dynamics to PL time-decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture-, excitonic-emission-, and Auger-recombination rates in this type-II nano-system. ER -
HACKL, Florian, Martyna GRYDLIK, Petr KLENOVSKÝ, Friedrich SCHAEFFLER, Thomas FROMHERZ and Moritz BREHM. Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots. \textit{Annalen der Physik (Berlin)}. 2019, vol.~531, No~6, p.~1-12. ISSN~0003-3804. Available from: https://dx.doi.org/10.1002/andp.201800259.
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