Determination of thicknesses and temperatures of crystalline
silicon wafers from optical measurements in the far infrared
region

J 2018

Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

FRANTA, Daniel, Pavel FRANTA, Jiří VOHÁNKA, Martin ČERMÁK, Ivan OHLÍDAL et. al.

Basic information

Original name

Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

Authors

FRANTA, Daniel (203 Czech Republic, guarantor, belonging to the institution), Pavel FRANTA (203 Czech Republic, belonging to the institution), Jiří VOHÁNKA (203 Czech Republic, belonging to the institution), Martin ČERMÁK (203 Czech Republic, belonging to the institution) and Ivan OHLÍDAL (203 Czech Republic, belonging to the institution)

Edition

Journal of Applied Physics, 2018, 0021-8979

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.328

RIV identification code

RIV/00216224:14310/18:00106358

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1063/1.5026195

UT WoS

000432331100037

Keywords in English

optical constants; temperature dependence

Abstract

V originále

Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for determination of their thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.

Links

LO1411, research and development project

Name: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

FRANTA, Daniel, Pavel FRANTA, Jiří VOHÁNKA, Martin ČERMÁK and Ivan OHLÍDAL. Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region. Journal of Applied Physics. 2018, vol. 123, No 18, p. 185707-185717. ISSN 0021-8979. Available from: https://dx.doi.org/10.1063/1.5026195.

@article{1501220,
   author = {Franta, Daniel and Franta, Pavel and Vohánka, Jiří and Čermák, Martin and Ohlídal, Ivan},
   article_number = {18},
   doi = {http://dx.doi.org/10.1063/1.5026195},
   keywords = {optical constants; temperature dependence},
   language = {eng},
   issn = {0021-8979},
   journal = {Journal of Applied Physics},
   title = {Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region},
   url = {http://dx.doi.org/10.1063/1.5026195},
   volume = {123},
   year = {2018}
}

TY  - JOUR
ID  - 1501220
AU  - Franta, Daniel - Franta, Pavel - Vohánka, Jiří - Čermák, Martin - Ohlídal, Ivan
PY  - 2018
TI  - Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region
JF  - Journal of Applied Physics
VL  - 123
IS  - 18
SP  - 185707
EP  - 185707
SN  - 00218979
KW  - optical constants
KW  - temperature dependence
UR  - http://dx.doi.org/10.1063/1.5026195
N2  - Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for determination of their thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.
ER  -

FRANTA, Daniel, Pavel FRANTA, Jiří VOHÁNKA, Martin ČERMÁK and Ivan OHLÍDAL. Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region. \textit{Journal of Applied Physics}. 2018, vol.~123, No~18, p.~185707-185717. ISSN~0021-8979. Available from: https://dx.doi.org/10.1063/1.5026195.

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