FRANTA, Daniel, Pavel FRANTA, Jiří VOHÁNKA, Martin ČERMÁK and Ivan OHLÍDAL. Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region. Journal of Applied Physics. 2018, vol. 123, No 18, p. 185707-185717. ISSN 0021-8979. Available from: https://dx.doi.org/10.1063/1.5026195.
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Basic information
Original name Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region
Authors FRANTA, Daniel (203 Czech Republic, guarantor, belonging to the institution), Pavel FRANTA (203 Czech Republic, belonging to the institution), Jiří VOHÁNKA (203 Czech Republic, belonging to the institution), Martin ČERMÁK (203 Czech Republic, belonging to the institution) and Ivan OHLÍDAL (203 Czech Republic, belonging to the institution).
Edition Journal of Applied Physics, 2018, 0021-8979.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 2.328
RIV identification code RIV/00216224:14310/18:00106358
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1063/1.5026195
UT WoS 000432331100037
Keywords in English optical constants; temperature dependence
Tags International impact, Reviewed
Changed by Changed by: Mgr. Michal Petr, učo 65024. Changed: 23/4/2024 14:14.
Abstract
Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for determination of their thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.
Links
LO1411, research and development projectName: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)
Investor: Ministry of Education, Youth and Sports of the CR
PrintDisplayed: 21/8/2024 07:56