HOLOVSKÝ, Jakub, Zdeněk REMEŠ, Aleš PORUBA, Daniel FRANTA, Briana CONRAD, Lucie ABELOVÁ and David BUŠEK. Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence. Review of Scientific Instruments. 2018, vol. 89, No 6, p. 063114-63119. ISSN 0034-6748. Available from: https://dx.doi.org/10.1063/1.5015988.
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Basic information
Original name Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence
Authors HOLOVSKÝ, Jakub (203 Czech Republic), Zdeněk REMEŠ (203 Czech Republic), Aleš PORUBA (203 Czech Republic), Daniel FRANTA (203 Czech Republic, guarantor, belonging to the institution), Briana CONRAD (203 Czech Republic), Lucie ABELOVÁ and David BUŠEK.
Edition Review of Scientific Instruments, 2018, 0034-6748.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 1.587
RIV identification code RIV/00216224:14310/18:00106359
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1063/1.5015988
UT WoS 000437195200014
Keywords in English IR reflectance; doping; semiconductors
Tags International impact, Reviewed
Changed by Changed by: Mgr. Michal Petr, učo 65024. Changed: 23/4/2024 14:15.
Abstract
An improved contactless method of the measurement and evaluation of charge carrier profiles in polished wafers by infrared reflectance was developed. The sensitivity of optical reflectance to the incidence angle was theoretically analyzed. A grazing incident angle enhances sensitivity to doping profile parameters. At the same time, the sensitivity to experimental errors sharply increases around the Brewster angle. Therefore, the optimal angle of 65 was chosen. Experimental errors such as unintentional polarization of the measurement beam were minimized by division by reference spectra taken on an undoped sample and further by normalization to a fixed value in the region of 4000 cm1 to 7000 cm1. The carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumptions. As a physical model, the Drude equation is used with two parameters assumed to be concentration-dependent: relaxation time and contribution from band-to-band excitations. The model parameters were calibrated independently by infrared ellipsometry. The presented method gives results in satisfactory agreement with the profiles measured by the electrochemical capacitance-voltage method.
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