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@inproceedings{1502059,
author = {Gablech, I. and Caha, Ondřej and Svatoš, V. and Prášek, J. and Pekárek, J. and Neužil, P. and Šikola, Tomáš},
address = {SLEZSKA},
booktitle = {9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017)},
keywords = {Titanium thin film; [001] orientation; stress-free; thermal coefficient of resistivity; resistivity},
howpublished = {tištěná verze "print"},
language = {eng},
location = {SLEZSKA},
isbn = {978-80-87294-81-9},
pages = {117-122},
publisher = {TANGER LTD},
title = {PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE},
year = {2018}
}
TY - JOUR
ID - 1502059
AU - Gablech, I. - Caha, Ondřej - Svatoš, V. - Prášek, J. - Pekárek, J. - Neužil, P. - Šikola, Tomáš
PY - 2018
TI - PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE
PB - TANGER LTD
CY - SLEZSKA
SN - 9788087294819
KW - Titanium thin film
KW - [001] orientation
KW - stress-free
KW - thermal coefficient of resistivity
KW - resistivity
N2 - We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of approximate to 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (rho) and the thermal coefficient of resistivity (alpha) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of approximate to 273 degrees C. The corresponding lattice parameters a(0) and c(0) were (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. Electrical parameters of this sample as rho and alpha were (9.2 +/- 0.1).10(-7) Omega.m and (2.6 +/- 0.2).10(-3) K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low rho and high alpha are essential. We found that rho and a are dependent on each other. The rho value was approximate to 2x higher than the bulk material value, which is an excellent result for a thin film with the thickness of approximate to 80 nm.
ER -
GABLECH, I., Ondřej CAHA, V. SVATOŠ, J. PRÁŠEK, J. PEKÁREK, P. NEUŽIL a Tomáš ŠIKOLA. PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE. In \textit{9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH \&{}amp; APPLICATION (NANOCON 2017)}. SLEZSKA: TANGER LTD, 2018, s.~117-122. ISBN~978-80-87294-81-9.
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