PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS
APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

D 2018

PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

GABLECH, I., Ondřej CAHA, V. SVATOŠ, J. PRÁŠEK, J. PEKÁREK et. al.

Basic information

Original name

PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

Authors

GABLECH, I., Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution), V. SVATOŠ, J. PRÁŠEK, J. PEKÁREK, P. NEUŽIL and Tomáš ŠIKOLA (203 Czech Republic)

Edition

SLEZSKA, 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017), p. 117-122, 6 pp. 2018

Publisher

TANGER LTD

Other information

Language

English

Type of outcome

Stať ve sborníku

Field of Study

10302 Condensed matter physics

Confidentiality degree

není předmětem státního či obchodního tajemství

Publication form

printed version "print"

RIV identification code

RIV/00216224:14310/18:00106417

Organization unit

Faculty of Science

ISBN

978-80-87294-81-9

UT WoS

000452823300018

Keywords in English

Titanium thin film; [001] orientation; stress-free; thermal coefficient of resistivity; resistivity

Abstract

V originále

We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of approximate to 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (rho) and the thermal coefficient of resistivity (alpha) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of approximate to 273 degrees C. The corresponding lattice parameters a(0) and c(0) were (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. Electrical parameters of this sample as rho and alpha were (9.2 +/- 0.1).10(-7) Omega.m and (2.6 +/- 0.2).10(-3) K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low rho and high alpha are essential. We found that rho and a are dependent on each other. The rho value was approximate to 2x higher than the bulk material value, which is an excellent result for a thin film with the thickness of approximate to 80 nm.

Links

LM2015041, research and development project

Name: CEITEC Nano

Investor: Ministry of Education, Youth and Sports of the CR

LO1411, research and development project

Name: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

GABLECH, I., Ondřej CAHA, V. SVATOŠ, J. PRÁŠEK, J. PEKÁREK, P. NEUŽIL and Tomáš ŠIKOLA. PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE. In 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017). SLEZSKA: TANGER LTD, 2018, p. 117-122. ISBN 978-80-87294-81-9.

@inproceedings{1502059,
   author = {Gablech, I. and Caha, Ondřej and Svatoš, V. and Prášek, J. and Pekárek, J. and Neužil, P. and Šikola, Tomáš},
   address = {SLEZSKA},
   booktitle = {9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017)},
   keywords = {Titanium thin film; [001] orientation; stress-free; thermal coefficient of resistivity; resistivity},
   howpublished = {tištěná verze "print"},
   language = {eng},
   location = {SLEZSKA},
   isbn = {978-80-87294-81-9},
   pages = {117-122},
   publisher = {TANGER LTD},
   title = {PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE},
   year = {2018}
}

TY  - JOUR
ID  - 1502059
AU  - Gablech, I. - Caha, Ondřej - Svatoš, V. - Prášek, J. - Pekárek, J. - Neužil, P. - Šikola, Tomáš
PY  - 2018
TI  - PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE
PB  - TANGER LTD
CY  - SLEZSKA
SN  - 9788087294819
KW  - Titanium thin film
KW  - [001] orientation
KW  - stress-free
KW  - thermal coefficient of resistivity
KW  - resistivity
N2  - We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of approximate to 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (rho) and the thermal coefficient of resistivity (alpha) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of approximate to 273 degrees C. The corresponding lattice parameters a(0) and c(0) were (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. Electrical parameters of this sample as rho and alpha were (9.2 +/- 0.1).10(-7) Omega.m and (2.6 +/- 0.2).10(-3) K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low rho and high alpha are essential. We found that rho and a are dependent on each other. The rho value was approximate to 2x higher than the bulk material value, which is an excellent result for a thin film with the thickness of approximate to 80 nm.
ER  -

GABLECH, I., Ondřej CAHA, V. SVATOŠ, J. PRÁŠEK, J. PEKÁREK, P. NEUŽIL and Tomáš ŠIKOLA. PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE. In \textit{9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH \&{}amp; APPLICATION (NANOCON 2017)}. SLEZSKA: TANGER LTD, 2018, p.~117-122. ISBN~978-80-87294-81-9.

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