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@article{1506636, author = {Gablech, I. and Svatos, V. and Caha, Ondřej and Dubroka, Adam and Pekarek, J. and Klempa, J. and Neuzil, P. and Schneider, M. and Šikola, Tomáš}, article_location = {LAUSANNE}, article_number = {December}, doi = {http://dx.doi.org/10.1016/j.tsf.2018.12.035}, keywords = {Ion-beam sputtering deposition; Kaufman ion-beam source; Aluminum nitride thin film; (001) preferential orientation; X-ray diffraction; Optical properties; Ellipsometry; d(33) piezoelectric coefficient}, language = {eng}, issn = {0040-6090}, journal = {Thin Solid Films}, title = {Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup}, url = {http://dx.doi.org/10.1016/j.tsf.2018.12.035}, volume = {670}, year = {2019} }
TY - JOUR ID - 1506636 AU - Gablech, I. - Svatos, V. - Caha, Ondřej - Dubroka, Adam - Pekarek, J. - Klempa, J. - Neuzil, P. - Schneider, M. - Šikola, Tomáš PY - 2019 TI - Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup JF - Thin Solid Films VL - 670 IS - December SP - 105-112 EP - 105-112 PB - ELSEVIER SCIENCE SA SN - 00406090 KW - Ion-beam sputtering deposition KW - Kaufman ion-beam source KW - Aluminum nitride thin film KW - (001) preferential orientation KW - X-ray diffraction KW - Optical properties KW - Ellipsometry KW - d(33) piezoelectric coefficient UR - http://dx.doi.org/10.1016/j.tsf.2018.12.035 L2 - http://dx.doi.org/10.1016/j.tsf.2018.12.035 N2 - We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 degrees C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d(33) = (7.33 +/- 0.08) pC.N-1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits. ER -
GABLECH, I., V. SVATOS, Ondřej CAHA, Adam DUBROKA, J. PEKAREK, J. KLEMPA, P. NEUZIL, M. SCHNEIDER a Tomáš ŠIKOLA. Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup. \textit{Thin Solid Films}. LAUSANNE: ELSEVIER SCIENCE SA, 2019, roč.~670, December, s.~105-112. ISSN~0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2018.12.035.
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