VOHÁNKA, Jiří, Ivan OHLÍDAL, Miloslav OHLÍDAL, Štěpán ŠUSTEK, Martin ČERMÁK, Václav ŠULC, Petr VAŠINA, Jaroslav ŽENÍŠEK and Daniel FRANTA. Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects. Coatings. Basel: MDPI, 2019, vol. 9, No 7, p. 1-21. ISSN 2079-6412. Available from: https://dx.doi.org/10.3390/coatings9070416.
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Basic information
Original name Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects
Authors VOHÁNKA, Jiří (203 Czech Republic, guarantor, belonging to the institution), Ivan OHLÍDAL (203 Czech Republic, belonging to the institution), Miloslav OHLÍDAL (203 Czech Republic), Štěpán ŠUSTEK (203 Czech Republic), Martin ČERMÁK (203 Czech Republic, belonging to the institution), Václav ŠULC (203 Czech Republic), Petr VAŠINA (203 Czech Republic, belonging to the institution), Jaroslav ŽENÍŠEK (203 Czech Republic, belonging to the institution) and Daniel FRANTA (203 Czech Republic, belonging to the institution).
Edition Coatings, Basel, MDPI, 2019, 2079-6412.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10306 Optics
Country of publisher Switzerland
Confidentiality degree is not subject to a state or trade secret
WWW Full Text
Impact factor Impact factor: 2.436
RIV identification code RIV/00216224:14310/19:00110403
Organization unit Faculty of Science
Doi http://dx.doi.org/10.3390/coatings9070416
UT WoS 000478656200044
Keywords in English silicon nitride;optical characterization;ellipsometry;inhomogeneous films;optical anisotropy
Tags rivok
Tags International impact, Reviewed
Changed by Changed by: Mgr. Marie Šípková, DiS., učo 437722. Changed: 24/3/2020 10:12.
Abstract
The study was devoted to optical characterization of non-stoichiometric silicon nitride films prepared by reactive magnetron sputtering in argon-nitrogen atmosphere onto cold (unheated) substrates. It was found that these films exhibit the combination of three defects: optical inhomogeneity (refractive index profile across the films), uniaxial anisotropy with the optical axis perpendicular to the boundaries and random roughness of the upper boundaries. The influence of the uniaxial anisotropy was included into the corresponding formulae of the optical quantities using the matrix formalism and the approximation of the inhomogeneous layer by a multilayer system consisting of large number thin homogeneous layers. The random roughness was described using the scalar diffraction theory. The processing of the experimental data was performed using the multi-sample modification of the least-squares method, in which experimental data of several samples differing in thickness were processed simultaneously. The dielectric response of the silicon nitride films was modeled using the modification of the universal dispersion model, which takes into account absorption processes corresponding to valence-to-conduction band electron transitions, excitonic effects and Urbach tail. The spectroscopic reflectometric and ellipsometric measurements were supplemented by measuring the uniformity of the samples using imaging spectroscopic reflectometry.
Links
LO1411, research and development projectName: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)
Investor: Ministry of Education, Youth and Sports of the CR
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