Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

KLENOVSKÝ, Petr, Andrei SCHLIWA and Dieter BIMBERG. Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots. Physical Review B. American Physical Society, 2019, vol. 100, No 11, p. 115424-115437. ISSN 2469-9950. Available from: https://dx.doi.org/10.1103/PhysRevB.100.115424.

Basic information

• Original name: Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots
• Authors: KLENOVSKÝ, Petr (203 Czech Republic, belonging to the institution), Andrei SCHLIWA (276 Germany) and Dieter BIMBERG (276 Germany).
• Edition: Physical Review B, American Physical Society, 2019, 2469-9950.

Other information

• Original language: English
• Type of outcome: Article in a journal
• Field of Study: 10302 Condensed matter physics
• Country of publisher: United States of America
• Confidentiality degree: is not subject to a state or trade secret
• WWW: URL
• Impact factor: Impact factor: 3.575
• RIV identification code: RIV/00216224:14310/19:00110690
• Organization unit: Faculty of Science
• Doi: http://dx.doi.org/10.1103/PhysRevB.100.115424
• UT WoS: 000485761800006
• Keywords in English: Quantum Dots;Electronic structure;Multiparticle states
• Tags: International impact, Reviewed

Abstract

Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In,Ga)As/GaAs dots. We proceed from the inspection of the confinement potentials for k!=0 and k=0 conduction and k=0 valence bands, through the formulation of k.p calculations for k-indirect transitions, up to the excitonic structure of Gamma transitions. Throughout this process we compare the results obtained for dots on both GaP and GaAs substrates, enabling us to make a direct comparison to the (In,Ga)As/GaAs quantum dot system. We also discuss the realization of quantum gates.

Links

• LQ1601, research and development project: Name: CEITEC 2020 (Acronym: CEITEC2020)

Investor: Ministry of Education, Youth and Sports of the CR

• 7AMB17AT044, research and development project: Name: Studium excitonové struktury kvantových teček typu II pomocí Fourierovské spektroskopie založené na měření jednofotonové korelace

Investor: Ministry of Education, Youth and Sports of the CR

• 8C18001, research and development project: Name: CMOS Compatible Single Photon Sources based on SiGe Quantum Dots (Acronym: CUSPIDOR)

Investor: Ministry of Education, Youth and Sports of the CR, QUANTERA