Atomic layer deposition of copper (I) bromide wide bandgap semiconductors

KRUMPOLEC, Richard, Dominik BAČA, David Campbell CAMERON a Jana JURMANOVÁ. Atomic layer deposition of copper (I) bromide wide bandgap semiconductors. Online. In EMRS Fall Meeting 2019. 2019, [citováno 2024-04-23]

Základní údaje

• Originální název: Atomic layer deposition of copper (I) bromide wide bandgap semiconductors
• Autoři: KRUMPOLEC, Richard, Dominik BAČA, David Campbell CAMERON a Jana JURMANOVÁ
• Vydání: EMRS Fall Meeting 2019, 2019.

Další údaje

• Originální jazyk: angličtina
• Typ výsledku: Konferenční abstrakt
• Utajení: není předmětem státního či obchodního tajemství
• Organizační jednotka: Přírodovědecká fakulta
• Klíčová slova anglicky: ALD; Copper (I) Bromide; nanocrystallites; nucleation
• Příznaky: Mezinárodní význam

Anotace

Zinc blende-structured copper (I) halides are wide-band, direct gap semiconductors with high exciton binding energies which have been investigated for some time for their application to optoelectronic devices. The possibility of stable, room temperature, UV emission, together with high biexciton binding energies, enables optoelectronic effects such as bistability and four-wave mixing with the potential for new short wavelength devices. For optoelectronic devices it is important to be able to control the deposition either in thin film form or as arrays of nanocrystallites. Atomic Layer Deposition (ALD) is capable of enabling uniform and well controlled deposition of thin films and nanocrystallites. This technique has previously been applied to copper chloride CuCl. Deposition using an ALD-like process has also been reported using different precursors. This paper reports on the deposition of copper bromide CuBr using [Bis(trimethylsilyl)acetylene]-(hexafluoroacetylacetonato)copper(I) and pyridine-HBr as precursors. The crystal structural, chemical composition and optoelectronic properties of the CuBr films are reported and the deposition is compared to that of CuCl.

Návaznosti

• GA17-02328S, projekt VaV: Název: UVIHOPE Ultrafialová halogenidová optoelektronika (Akronym: UVIHOPE)

Investor: Grantová agentura ČR, UVIHOPE Ultrafialová halogenidová optoelektronika