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@proceedings{1558239,
author = {Krumpolec, Richard and Bača, Dominik and Cameron, David Campbell and Jurmanová, Jana},
booktitle = {EMRS Fall Meeting 2019},
keywords = {ALD; Copper (I) Bromide; nanocrystallites; nucleation},
language = {eng},
title = {Atomic layer deposition of copper (I) bromide wide bandgap semiconductors},
year = {2019}
}
TY - CONF
ID - 1558239
AU - Krumpolec, Richard - Bača, Dominik - Cameron, David Campbell - Jurmanová, Jana
PY - 2019
TI - Atomic layer deposition of copper (I) bromide wide bandgap semiconductors
KW - ALD
KW - Copper (I) Bromide
KW - nanocrystallites
KW - nucleation
N2 - Zinc blende-structured copper (I) halides are wide-band, direct gap semiconductors with high exciton binding energies which have been investigated for some time for their application to optoelectronic devices. The possibility of stable, room temperature, UV emission, together with high biexciton binding energies, enables optoelectronic effects such as bistability and four-wave mixing with the potential for new short wavelength devices. For optoelectronic devices it is important to be able to control the deposition either in thin film form or as arrays of nanocrystallites. Atomic Layer Deposition (ALD) is capable of enabling uniform and well controlled deposition of thin films and nanocrystallites. This technique has previously been applied to copper chloride CuCl. Deposition using an ALD-like process has also been reported using different precursors. This paper reports on the deposition of copper bromide CuBr using [Bis(trimethylsilyl)acetylene]-(hexafluoroacetylacetonato)copper(I) and pyridine-HBr as precursors. The crystal structural, chemical composition and optoelectronic properties of the CuBr films are reported and the deposition is compared to that of CuCl.
ER -
KRUMPOLEC, Richard, Dominik BAČA, David Campbell CAMERON and Jana JURMANOVÁ. Atomic layer deposition of copper (I) bromide wide bandgap semiconductors. In \textit{EMRS Fall Meeting 2019}. 2019.
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