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@article{1577298,
author = {Steindl, Petr and Sala, Elisa Maddalena and Alén, Benito and Fuertes Marrón, David and Bimberg, Dieter and Klenovský, Petr},
article_number = {19},
doi = {http://dx.doi.org/10.1103/PhysRevB.100.195407},
keywords = {quantum dots;III-V semiconductors;photoluminescence;k.p theory;type-I and type-II heterostructures},
language = {eng},
issn = {2469-9950},
journal = {Physical Review B},
title = {Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix},
url = {https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407},
volume = {100},
year = {2019}
}
TY - JOUR
ID - 1577298
AU - Steindl, Petr - Sala, Elisa Maddalena - Alén, Benito - Fuertes Marrón, David - Bimberg, Dieter - Klenovský, Petr
PY - 2019
TI - Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
JF - Physical Review B
VL - 100
IS - 19
SP - 195407
EP - 195407
PB - American Physical Society
SN - 24699950
KW - quantum dots;III-V semiconductors;photoluminescence;k.p theory;type-I and type-II heterostructures
UR - https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407
L2 - https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407
N2 - The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Gamma and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k.p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.
ER -
STEINDL, Petr, Elisa Maddalena SALA, Benito ALÉN, David FUERTES MARRÓN, Dieter BIMBERG a Petr KLENOVSKÝ. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix. \textit{Physical Review B}. American Physical Society, 2019, roč.~100, č.~19, s.~195407-195425. ISSN~2469-9950. Dostupné z: https://dx.doi.org/10.1103/PhysRevB.100.195407.
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