Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in
a GaP matrix

J 2019

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

STEINDL, Petr, Elisa Maddalena SALA, Benito ALÉN, David FUERTES MARRÓN, Dieter BIMBERG et. al.

Basic information

Original name

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Authors

STEINDL, Petr (203 Czech Republic, belonging to the institution), Elisa Maddalena SALA (380 Italy), Benito ALÉN (724 Spain), David FUERTES MARRÓN (724 Spain), Dieter BIMBERG (276 Germany) and Petr KLENOVSKÝ (203 Czech Republic, guarantor, belonging to the institution)

Edition

Physical Review B, American Physical Society, 2019, 2469-9950

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 3.575

RIV identification code

RIV/00216224:14310/19:00111207

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1103/PhysRevB.100.195407

UT WoS

000495049700003

Keywords in English

quantum dots;III-V semiconductors;photoluminescence;k.p theory;type-I and type-II heterostructures

Abstract

V originále

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Gamma and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k.p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

Links

LQ1601, research and development project

Name: CEITEC 2020 (Acronym: CEITEC2020)

Investor: Ministry of Education, Youth and Sports of the CR

8C18001, research and development project

Name: CMOS Compatible Single Photon Sources based on SiGe Quantum Dots (Acronym: CUSPIDOR)

Investor: Ministry of Education, Youth and Sports of the CR, QUANTERA

Citovat

STEINDL, Petr, Elisa Maddalena SALA, Benito ALÉN, David FUERTES MARRÓN, Dieter BIMBERG and Petr KLENOVSKÝ. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix. Physical Review B. American Physical Society, 2019, vol. 100, No 19, p. 195407-195425. ISSN 2469-9950. Available from: https://dx.doi.org/10.1103/PhysRevB.100.195407.

@article{1577298,
   author = {Steindl, Petr and Sala, Elisa Maddalena and Alén, Benito and Fuertes Marrón, David and Bimberg, Dieter and Klenovský, Petr},
   article_number = {19},
   doi = {http://dx.doi.org/10.1103/PhysRevB.100.195407},
   keywords = {quantum dots;III-V semiconductors;photoluminescence;k.p theory;type-I and type-II heterostructures},
   language = {eng},
   issn = {2469-9950},
   journal = {Physical Review B},
   title = {Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix},
   url = {https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407},
   volume = {100},
   year = {2019}
}

TY  - JOUR
ID  - 1577298
AU  - Steindl, Petr - Sala, Elisa Maddalena - Alén, Benito - Fuertes Marrón, David - Bimberg, Dieter - Klenovský, Petr
PY  - 2019
TI  - Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
JF  - Physical Review B
VL  - 100
IS  - 19
SP  - 195407
EP  - 195407
PB  - American Physical Society
SN  - 24699950
KW  - quantum dots;III-V semiconductors;photoluminescence;k.p theory;type-I and type-II heterostructures
UR  - https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407
L2  - https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407
N2  - The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Gamma and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k.p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.
ER  -

STEINDL, Petr, Elisa Maddalena SALA, Benito ALÉN, David FUERTES MARRÓN, Dieter BIMBERG and Petr KLENOVSKÝ. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix. \textit{Physical Review B}. American Physical Society, 2019, vol.~100, No~19, p.~195407-195425. ISSN~2469-9950. Available from: https://dx.doi.org/10.1103/PhysRevB.100.195407.

Detailed Information on Publication Record