Optical properties of the crystalline silicon wafers described
using the universal dispersion model

J 2019

Optical properties of the crystalline silicon wafers described using the universal dispersion model

FRANTA, Daniel, Jiří VOHÁNKA, Martin BRÁNECKÝ, Pavel FRANTA, Martin ČERMÁK et. al.

Basic information

Original name

Optical properties of the crystalline silicon wafers described using the universal dispersion model

Authors

FRANTA, Daniel (203 Czech Republic, belonging to the institution), Jiří VOHÁNKA (203 Czech Republic, belonging to the institution), Martin BRÁNECKÝ (203 Czech Republic), Pavel FRANTA (203 Czech Republic, belonging to the institution), Martin ČERMÁK (203 Czech Republic, belonging to the institution), Ivan OHLÍDAL (203 Czech Republic, belonging to the institution) and Vladimír ČECH (203 Czech Republic)

Edition

Journal of Vacuum Science & Technology B, New York, A V S AMER INST PHYSICS, 2019, 2166-2746

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10306 Optics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 1.511

RIV identification code

RIV/00216224:14310/19:00112018

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1116/1.5122284

UT WoS

000522021700058

Keywords in English

Spectrophotometry;Gaussian broadening;Optical constants;Optical properties;Phonons;Dielectric properties

Abstract

V originále

The optical properties of a slightly boron doped float-zone crystalline silicon wafer are studied using ellipsometry and spectrophotometry in a wide spectral range from far IR to vacuum UV. One side of the wafer was cleaned in an argon plasma, which influenced the optical properties of silicon near the surface. The dielectric response of silicon was modeled using a simplified universal dispersion model which is constructed on the basis of parameterization of the joint density of states describing both the electronic and phonon excitations. Several variants of models describing phonon absorption and interband transitions are discussed. It was possible to accurately determine the optical constants of bulk silicon and the optical constants near the perturbed surface over a wide spectral range. These optical constants agree well with those found in other works. From the optical measurements, it was also possible to determine the thickness of the wafer and the static value of resistivity, and the determined values agreed with nominal values specified for the wafer.

Links

ED2.1.00/03.0086, research and development project

Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, research and development project

Name: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Acronym: CEPLANT plus)

Investor: Ministry of Education, Youth and Sports of the CR

Citovat

FRANTA, Daniel, Jiří VOHÁNKA, Martin BRÁNECKÝ, Pavel FRANTA, Martin ČERMÁK, Ivan OHLÍDAL and Vladimír ČECH. Optical properties of the crystalline silicon wafers described using the universal dispersion model. Journal of Vacuum Science & Technology B. New York: A V S AMER INST PHYSICS, 2019, vol. 37, No 6, p. "062907-1"-"062907-14", 14 pp. ISSN 2166-2746. Available from: https://dx.doi.org/10.1116/1.5122284.

@article{1598876,
   author = {Franta, Daniel and Vohánka, Jiří and Bránecký, Martin and Franta, Pavel and Čermák, Martin and Ohlídal, Ivan and Čech, Vladimír},
   article_location = {New York},
   article_number = {6},
   doi = {http://dx.doi.org/10.1116/1.5122284},
   keywords = {Spectrophotometry;Gaussian broadening;Optical constants;Optical properties;Phonons;Dielectric properties},
   language = {eng},
   issn = {2166-2746},
   journal = {Journal of Vacuum Science & Technology B},
   title = {Optical properties of the crystalline silicon wafers described using the universal dispersion model},
   url = {https://doi.org/10.1116/1.5122284},
   volume = {37},
   year = {2019}
}

TY  - JOUR
ID  - 1598876
AU  - Franta, Daniel - Vohánka, Jiří - Bránecký, Martin - Franta, Pavel - Čermák, Martin - Ohlídal, Ivan - Čech, Vladimír
PY  - 2019
TI  - Optical properties of the crystalline silicon wafers described using the universal dispersion model
JF  - Journal of Vacuum Science & Technology B
VL  - 37
IS  - 6
SP  - "062907-1"-"062907-14"
EP  - "062907-1"-"062907-14"
PB  - A V S AMER INST PHYSICS
SN  - 21662746
KW  - Spectrophotometry;Gaussian broadening;Optical constants;Optical properties;Phonons;Dielectric properties
UR  - https://doi.org/10.1116/1.5122284
L2  - https://doi.org/10.1116/1.5122284
N2  - The optical properties of a slightly boron doped float-zone crystalline silicon wafer are studied using ellipsometry and spectrophotometry in a wide spectral range from far IR to vacuum UV. One side of the wafer was cleaned in an argon plasma, which influenced the optical properties of silicon near the surface. The dielectric response of silicon was modeled using a simplified universal dispersion model which is constructed on the basis of parameterization of the joint density of states describing both the electronic and phonon excitations. Several variants of models describing phonon absorption and interband transitions are discussed. It was possible to accurately determine the optical constants of bulk silicon and the optical constants near the perturbed surface over a wide spectral range. These optical constants agree well with those found in other works. From the optical measurements, it was also possible to determine the thickness of the wafer and the static value of resistivity, and the determined values agreed with nominal values specified for the wafer.
ER  -

FRANTA, Daniel, Jiří VOHÁNKA, Martin BRÁNECKÝ, Pavel FRANTA, Martin ČERMÁK, Ivan OHLÍDAL and Vladimír ČECH. Optical properties of the crystalline silicon wafers described using the universal dispersion model. \textit{Journal of Vacuum Science \&{} Technology B}. New York: A V S AMER INST PHYSICS, 2019, vol.~37, No~6, p.~''062907-1''-''062907-14'', 14 pp. ISSN~2166-2746. Available from: https://dx.doi.org/10.1116/1.5122284.

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