HULICIUS, E., K. KULDOVA, A. HOSPODKOVA, J. PANGRAC, F. DOMINEC, Josef HUMLÍČEK, I. PELANT, O. CIBULKA and K. HERYNKOVA. MOVPE GaN/AlGaN HEMT NANO-STRUCTURES. Online. In 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2018 (R)). SLEZSKA: TANGER LTD, 2019, p. 30-35. ISBN 978-80-87294-89-5.
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Basic information
Original name MOVPE GaN/AlGaN HEMT NANO-STRUCTURES
Authors HULICIUS, E., K. KULDOVA, A. HOSPODKOVA, J. PANGRAC, F. DOMINEC, Josef HUMLÍČEK (203 Czech Republic, guarantor, belonging to the institution), I. PELANT, O. CIBULKA and K. HERYNKOVA.
Edition SLEZSKA, 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2018 (R)), p. 30-35, 6 pp. 2019.
Publisher TANGER LTD
Other information
Original language English
Type of outcome Proceedings paper
Field of Study 10300 1.3 Physical sciences
Country of publisher Czech Republic
Confidentiality degree is not subject to a state or trade secret
Publication form electronic version available online
WWW URL
RIV identification code RIV/00216224:14740/19:00108444
Organization unit Central European Institute of Technology
ISBN 978-80-87294-89-5
UT WoS 000513131900004
Keywords in English HEMT; MOVPE; nitrides; quantum well
Tags rivok
Tags International impact, Reviewed
Changed by Changed by: Mgr. Pavla Foltynová, Ph.D., učo 106624. Changed: 24/4/2020 11:16.
Abstract
GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures described and discussed here were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished 6" Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and mu-Raman spectroscopy.
Links
TH02010014, research and development projectName: Nové polovodičové struktury pro pokročilé elektronické aplikace
Investor: Technology Agency of the Czech Republic
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