Influence of Cross-Correlation of Rough Boundaries on
Reflectance of Thin Films on GaAs and Si Substrates

D 2009

Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates

VIZDA, Frantisek, Ivan OHLÍDAL and Vojtech HRUBY

Basic information

Original name

Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates

Authors

VIZDA, Frantisek (guarantor), Ivan OHLÍDAL (203 Czech Republic, belonging to the institution) and Vojtech HRUBY

Edition

MELVILLE, PHYSICS OF SEMICONDUCTORS, p. 19-20, 2 pp. 2009

Publisher

AMER INST PHYSICS

Other information

Language

English

Type of outcome

Stať ve sborníku

Field of Study

10300 1.3 Physical sciences

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

Publication form

printed version "print"

References:

URL

Organization unit

Faculty of Science

ISBN

978-0-7354-0736-7

ISSN

DOI

http://dx.doi.org/10.1063/1.3295367

UT WoS

000281590800009

Keywords in English

Rough thin films; Semiconductor substrates; Cross-correlation; Reflectance

Abstract

V originále

In this contribution the reflectance of thin films on semiconductor substrates with correlated randomly rough boundaries is analyzed. The theoretical approach is based on the scalar theory of diffraction of light. The numerical analysis of the reflectance is performed for rough thin films on GaAs and Si substrates. This analysis demonstrates that the reflectance depends not only on the rms values of the heights of the irregularities of the boundary roughness but it also depends on values of cross-correlation coefficients between the rough boundaries. The magnitudes of boundary roughness and cross-correlation between the rough boundaries depend on the technological procedures of creating thin film systems. By interpreting the measured reflectance spectra, the values of optical and roughness parameters can be determined.

Citovat

VIZDA, Frantisek, Ivan OHLÍDAL and Vojtech HRUBY. Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates. In Caldas, M. J. ; Studart, N. PHYSICS OF SEMICONDUCTORS. MELVILLE: AMER INST PHYSICS, 2009, p. 19-20. ISBN 978-0-7354-0736-7. Available from: https://dx.doi.org/10.1063/1.3295367.

@inproceedings{1674880,
   author = {Vizda, Frantisek and Ohlídal, Ivan and Hruby, Vojtech},
   address = {MELVILLE},
   booktitle = {PHYSICS OF SEMICONDUCTORS},
   doi = {http://dx.doi.org/10.1063/1.3295367},
   editor = {Caldas, M. J. ; Studart, N.},
   keywords = {Rough thin films; Semiconductor substrates; Cross-correlation; Reflectance},
   howpublished = {tištěná verze "print"},
   language = {eng},
   location = {MELVILLE},
   isbn = {978-0-7354-0736-7},
   pages = {19-20},
   publisher = {AMER INST PHYSICS},
   title = {Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates},
   url = {https://doi.org/10.1063/1.3295367},
   year = {2009}
}

TY  - JOUR
ID  - 1674880
AU  - Vizda, Frantisek - Ohlídal, Ivan - Hruby, Vojtech
PY  - 2009
TI  - Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates
PB  - AMER INST PHYSICS
CY  - MELVILLE
SN  - 9780735407367
KW  - Rough thin films
KW  - Semiconductor substrates
KW  - Cross-correlation
KW  - Reflectance
UR  - https://doi.org/10.1063/1.3295367
L2  - https://doi.org/10.1063/1.3295367
N2  - In this contribution the reflectance of thin films on semiconductor substrates with correlated randomly rough boundaries is analyzed. The theoretical approach is based on the scalar theory of diffraction of light. The numerical analysis of the reflectance is performed for rough thin films on GaAs and Si substrates. This analysis demonstrates that the reflectance depends not only on the rms values of the heights of the irregularities of the boundary roughness but it also depends on values of cross-correlation coefficients between the rough boundaries. The magnitudes of boundary roughness and cross-correlation between the rough boundaries depend on the technological procedures of creating thin film systems. By interpreting the measured reflectance spectra, the values of optical and roughness parameters can be determined.
ER  -

VIZDA, Frantisek, Ivan OHLÍDAL and Vojtech HRUBY. Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates. In Caldas, M. J. ; Studart, N. \textit{PHYSICS OF SEMICONDUCTORS}. MELVILLE: AMER INST PHYSICS, 2009, p.~19-20. ISBN~978-0-7354-0736-7. Available from: https://dx.doi.org/10.1063/1.3295367.

Detailed Information on Publication Record