Structure Quality of LuFeO3 Epitaxial Layers Grown by
Pulsed-Laser Deposition on Sapphire/Pt

J 2020

Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

BAUER, Sondes, Adriana RODRIGUES, Lukáš HORÁK, Xiaowei JIN, Reinhard SCHNEIDER et. al.

Basic information

Original name

Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

Authors

BAUER, Sondes, Adriana RODRIGUES, Lukáš HORÁK, Xiaowei JIN, Reinhard SCHNEIDER, Tilo BAUMBACH and Václav HOLÝ (203 Czech Republic, guarantor, belonging to the institution)

Edition

Journal of Materials Science: Materials in Electronics, Basel, MDPI, 2020, 1996-1944

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Switzerland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 3.623

RIV identification code

RIV/00216224:14740/20:00117385

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.3390/ma13010061

UT WoS

000515499300061

Keywords in English

pulsed-laser deposition; in situ X-ray diffraction; electron microscopy; multiferroics

Abstract

V originále

Structural quality of LuFeO3 epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO3 during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO3 growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO3 lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO3 was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO3 by reducing the misfit of the LuFeO3 lattice with respect to the material underneath.

Citovat

BAUER, Sondes, Adriana RODRIGUES, Lukáš HORÁK, Xiaowei JIN, Reinhard SCHNEIDER, Tilo BAUMBACH and Václav HOLÝ. Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt. Journal of Materials Science: Materials in Electronics. Basel: MDPI, 2020, vol. 13, No 1, p. 1-19. ISSN 1996-1944. Available from: https://dx.doi.org/10.3390/ma13010061.

@article{1710878,
   author = {Bauer, Sondes and Rodrigues, Adriana and Horák, Lukáš and Jin, Xiaowei and Schneider, Reinhard and Baumbach, Tilo and Holý, Václav},
   article_location = {Basel},
   article_number = {1},
   doi = {http://dx.doi.org/10.3390/ma13010061},
   keywords = {pulsed-laser deposition; in situ X-ray diffraction; electron microscopy; multiferroics},
   language = {eng},
   issn = {1996-1944},
   journal = {Journal of Materials Science: Materials in Electronics},
   title = {Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt},
   url = {https://doi.org/10.3390/ma13010061},
   volume = {13},
   year = {2020}
}

TY  - JOUR
ID  - 1710878
AU  - Bauer, Sondes - Rodrigues, Adriana - Horák, Lukáš - Jin, Xiaowei - Schneider, Reinhard - Baumbach, Tilo - Holý, Václav
PY  - 2020
TI  - Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt
JF  - Journal of Materials Science: Materials in Electronics
VL  - 13
IS  - 1
SP  - 1-19
EP  - 1-19
PB  - MDPI
SN  - 19961944
KW  - pulsed-laser deposition
KW  - in situ X-ray diffraction
KW  - electron microscopy
KW  - multiferroics
UR  - https://doi.org/10.3390/ma13010061
L2  - https://doi.org/10.3390/ma13010061
N2  - Structural quality of LuFeO3 epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO3 during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO3 growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO3 lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO3 was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO3 by reducing the misfit of the LuFeO3 lattice with respect to the material underneath.
ER  -

BAUER, Sondes, Adriana RODRIGUES, Lukáš HORÁK, Xiaowei JIN, Reinhard SCHNEIDER, Tilo BAUMBACH and Václav HOLÝ. Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt. \textit{Journal of Materials Science: Materials in Electronics}. Basel: MDPI, 2020, vol.~13, No~1, p.~1-19. ISSN~1996-1944. Available from: https://dx.doi.org/10.3390/ma13010061.

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