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GAJJELA, Raja S. R., Arthur L. HENDRIKS, James O. DOUGLAS, Elisa M. SALA, Petr STEINDL, Petr KLENOVSKÝ, Paul A. J. BAGOT, Michael P. MOODY, Dieter BIMBERG and Paul M. KOENRAAD. Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots. Light: Science & Applications. Springer Nature, vol. 10, No 1, p. 1-13. ISSN 2047-7538. doi:10.1038/s41377-021-00564-z. 2021.

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TY  - JOUR
ID  - 1776406
AU  - Gajjela, Raja S. R. - Hendriks, Arthur L. - Douglas, James O. - Sala, Elisa M. - Steindl, Petr - Klenovský, Petr - Bagot, Paul A. J. - Moody, Michael P. - Bimberg, Dieter - Koenraad, Paul M.
PY  - 2021
TI  - Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
JF  - Light: Science & Applications
VL  - 10
IS  - 1
SP  - 1-13
EP  - 1-13
PB  - Springer Nature
SN  - 20477538
KW  - Photonic devices
KW  - Quantum dots
UR  - https://doi.org/10.1038/s41377-021-00564-z
N2  - We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 1011 cm−2. APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding ∼InxGa1 − xAs1 − ySby, where x = 0.25–0.30 and y = 0.10–0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.
ER  -

Basic information
Original name	Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
Authors	GAJJELA, Raja S. R. (guarantor), Arthur L. HENDRIKS, James O. DOUGLAS, Elisa M. SALA, Petr STEINDL (203 Czech Republic, belonging to the institution), Petr KLENOVSKÝ (203 Czech Republic, belonging to the institution), Paul A. J. BAGOT, Michael P. MOODY, Dieter BIMBERG and Paul M. KOENRAAD.
Edition	Light: Science & Applications, Springer Nature, 2021, 2047-7538.

Other information
Original language	English
Type of outcome	Article in a journal
Field of Study	10302 Condensed matter physics
Country of publisher	United Kingdom of Great Britain and Northern Ireland
Confidentiality degree	is not subject to a state or trade secret
WWW	URL
Impact factor	Impact factor: 20.257
RIV identification code	RIV/00216224:14310/21:00121781
Organization unit	Faculty of Science
Doi	http://dx.doi.org/10.1038/s41377-021-00564-z
UT WoS	000661488200001
Keywords in English	Photonic devices; Quantum dots
Tags	rivok
Tags	International impact, Reviewed
Changed by	Changed by: Mgr. Marie Šípková, DiS., učo 437722. Changed: 16/5/2022 11:23.

Abstract
We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 1011 cm−2. APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding ∼InxGa1 − xAs1 − ySby, where x = 0.25–0.30 and y = 0.10–0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.

Abstract

We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 1011 cm−2. APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding ∼InxGa1 − xAs1 − ySby, where x = 0.25–0.30 and y = 0.10–0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.

Links
8C18001, research and development project	Name: CMOS Compatible Single Photon Sources based on SiGe Quantum Dots (Acronym: CUSPIDOR)
8C18001, research and development project	Investor: Ministry of Education, Youth and Sports of the CR, QUANTERA