J 2021

Nanoimaging of Orientational Defects in Semiconducting Organic Films

MRKYVKOVA, Nada, Adrian CERNESCU, Zdenek FUTERA, Alois NEBOJSA, Adam DUBROKA et. al.

Basic information

Original name

Nanoimaging of Orientational Defects in Semiconducting Organic Films

Authors

MRKYVKOVA, Nada (guarantor), Adrian CERNESCU, Zdenek FUTERA, Alois NEBOJSA (203 Czech Republic, belonging to the institution), Adam DUBROKA (203 Czech Republic, belonging to the institution), Michaela SOJKOVA, Martin HULMAN, Eva MAJKOVA, Matej JERGEL, Peter SIFFALOVIC and Frank SCHREIBER

Edition

Journal of Physical Chemistry C, Washington D.C. American Chemical Society, 2021, 1932-7447

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

Impact factor

Impact factor: 4.177

RIV identification code

RIV/00216224:14310/21:00119566

Organization unit

Faculty of Science

UT WoS

000648873500031

Keywords in English

Molecular properties; Defects; Layers; Molecules; Oscillation

Tags

Tags

International impact, Reviewed
Změněno: 14/1/2022 15:52, Mgr. Marie Šípková, DiS.

Abstract

V originále

The development of defect analysis for inorganic semiconductors in the past century paved the way for the success story of today's electronics. By analogy, defect analysis plays a critical role in developing and improving devices based on organic molecular semiconductors. However, because of weak molecular interactions, absent in inorganic semiconductors, device-relevant thin organic films are susceptible to the formation of defects in the molecular orientation, which in turn have a profound impact on the performance in the optoelectronic applications. To address this problem, we broaden the applicability of scattering-type scanning near-field optical microscopy (s-SNOM) and utilize the light-induced anisotropic response of vibrational modes to reveal the defects in molecular orientation. We show that in the case of molecular islands with steep crystal facets only the scattered s-SNOM optical amplitude can be exploited to describe the molecular arrangement reliably, while the phase-based analysis leads to artifacts. The presented s-SNOM analysis of molecular defects can be universally applied to diverse topographies, even at the nanoscale.

Links

GA20-10377S, research and development project
Name: Jevy v heterostrukturách oxidů přechodových kovů vyvolané dopováním a rozhraním (Acronym: TMO Heterostructures)
Investor: Czech Science Foundation
LM2018140, research and development project
Name: e-Infrastruktura CZ (Acronym: e-INFRA CZ)
Investor: Ministry of Education, Youth and Sports of the CR
90110, large research infrastructures
Name: CzechNanoLab