Detailed Information on Publication Record
2021
Nanoimaging of Orientational Defects in Semiconducting Organic Films
MRKYVKOVA, Nada, Adrian CERNESCU, Zdenek FUTERA, Alois NEBOJSA, Adam DUBROKA et. al.Basic information
Original name
Nanoimaging of Orientational Defects in Semiconducting Organic Films
Authors
MRKYVKOVA, Nada (guarantor), Adrian CERNESCU, Zdenek FUTERA, Alois NEBOJSA (203 Czech Republic, belonging to the institution), Adam DUBROKA (203 Czech Republic, belonging to the institution), Michaela SOJKOVA, Martin HULMAN, Eva MAJKOVA, Matej JERGEL, Peter SIFFALOVIC and Frank SCHREIBER
Edition
Journal of Physical Chemistry C, Washington D.C. American Chemical Society, 2021, 1932-7447
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United States of America
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 4.177
RIV identification code
RIV/00216224:14310/21:00119566
Organization unit
Faculty of Science
UT WoS
000648873500031
Keywords in English
Molecular properties; Defects; Layers; Molecules; Oscillation
Tags
Tags
International impact, Reviewed
Změněno: 14/1/2022 15:52, Mgr. Marie Šípková, DiS.
Abstract
V originále
The development of defect analysis for inorganic semiconductors in the past century paved the way for the success story of today's electronics. By analogy, defect analysis plays a critical role in developing and improving devices based on organic molecular semiconductors. However, because of weak molecular interactions, absent in inorganic semiconductors, device-relevant thin organic films are susceptible to the formation of defects in the molecular orientation, which in turn have a profound impact on the performance in the optoelectronic applications. To address this problem, we broaden the applicability of scattering-type scanning near-field optical microscopy (s-SNOM) and utilize the light-induced anisotropic response of vibrational modes to reveal the defects in molecular orientation. We show that in the case of molecular islands with steep crystal facets only the scattered s-SNOM optical amplitude can be exploited to describe the molecular arrangement reliably, while the phase-based analysis leads to artifacts. The presented s-SNOM analysis of molecular defects can be universally applied to diverse topographies, even at the nanoscale.
Links
GA20-10377S, research and development project |
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LM2018140, research and development project |
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90110, large research infrastructures |
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