Excitonic effects at the temperature-dependent direct bandgap
of Ge

J 2022

Excitonic effects at the temperature-dependent direct bandgap of Ge

EMMINGER, Carola, Nuwanjula S. SAMARASINGHA, Melissa Rivero ARIAS, Farzin ABADIZAMAN, José MENÉNDEZ et. al.

Basic information

Original name

Excitonic effects at the temperature-dependent direct bandgap of Ge

Authors

EMMINGER, Carola (40 Austria, guarantor, belonging to the institution), Nuwanjula S. SAMARASINGHA, Melissa Rivero ARIAS, Farzin ABADIZAMAN (364 Islamic Republic of Iran, belonging to the institution), José MENÉNDEZ and Stefan ZOLLNER

Edition

Journal of Applied Physics, American Institute of Physics, 2022, 0021-8979

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 3.200

RIV identification code

RIV/00216224:14310/22:00125891

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1063/5.0080158

UT WoS

000793144600002

Keywords in English

Dielectrics; Energy gap; Linear filters; Room temperature; Spectroellipsometry; Temperature; Temperature dependence

Abstract

V originále

The temperature dependence of the complex dielectric function 𝜖1+𝑖𝜖2 of bulk Ge near the direct bandgap was investigated with spectroscopic ellipsometry at temperatures between 10 and 710 K. Second derivatives of the dielectric function with respect to energy are obtained using a digital linear filter method. A model that incorporates excitonic effects using the Tanguy model for the Hulthén potential [C. Tanguy, Phys. Rev. B 60, 10660 (1999)] was used to fit the dielectric function and its second derivatives simultaneously. Using 𝑘⋅𝑝 theory and literature values for effective masses, reasonable agreement with the experiment is obtained for 𝜖2 up to room temperature using the direct bandgap and its broadening as the only adjustable parameters.

Links

EF18_053/0016952, research and development project

Name: Postdoc2MUNI

Citovat

EMMINGER, Carola, Nuwanjula S. SAMARASINGHA, Melissa Rivero ARIAS, Farzin ABADIZAMAN, José MENÉNDEZ and Stefan ZOLLNER. Excitonic effects at the temperature-dependent direct bandgap of Ge. Journal of Applied Physics. American Institute of Physics, 2022, vol. 131, No 16, p. 1-10. ISSN 0021-8979. Available from: https://dx.doi.org/10.1063/5.0080158.

@article{1856277,
   author = {Emminger, Carola and Samarasingha, Nuwanjula S. and Arias, Melissa Rivero and Abadizaman, Farzin and Menéndez, José and Zollner, Stefan},
   article_number = {16},
   doi = {http://dx.doi.org/10.1063/5.0080158},
   keywords = {Dielectrics; Energy gap; Linear filters; Room temperature; Spectroellipsometry; Temperature; Temperature dependence},
   language = {eng},
   issn = {0021-8979},
   journal = {Journal of Applied Physics},
   title = {Excitonic effects at the temperature-dependent direct bandgap of Ge},
   url = {https://aip.scitation.org/doi/abs/10.1063/5.0080158},
   volume = {131},
   year = {2022}
}

TY  - JOUR
ID  - 1856277
AU  - Emminger, Carola - Samarasingha, Nuwanjula S. - Arias, Melissa Rivero - Abadizaman, Farzin - Menéndez, José - Zollner, Stefan
PY  - 2022
TI  - Excitonic effects at the temperature-dependent direct bandgap of Ge
JF  - Journal of Applied Physics
VL  - 131
IS  - 16
SP  - 1-10
EP  - 1-10
PB  - American Institute of Physics
SN  - 00218979
KW  - Dielectrics
KW  - Energy gap
KW  - Linear filters
KW  - Room temperature
KW  - Spectroellipsometry
KW  - Temperature
KW  - Temperature dependence
UR  - https://aip.scitation.org/doi/abs/10.1063/5.0080158
N2  - The temperature dependence of the complex dielectric function 𝜖1+𝑖𝜖2 of bulk Ge near the direct bandgap was investigated with spectroscopic ellipsometry at temperatures between 10 and 710 K. Second derivatives of the dielectric function with respect to energy are obtained using a digital linear filter method. A model that incorporates excitonic effects using the Tanguy model for the Hulthén potential [C. Tanguy, Phys. Rev. B 60, 10660 (1999)] was used to fit the dielectric function and its second derivatives simultaneously. Using 𝑘⋅𝑝 theory and literature values for effective masses, reasonable agreement with the experiment is obtained for 𝜖2 up to room temperature using the direct bandgap and its broadening as the only adjustable parameters.
ER  -

EMMINGER, Carola, Nuwanjula S. SAMARASINGHA, Melissa Rivero ARIAS, Farzin ABADIZAMAN, José MENÉNDEZ and Stefan ZOLLNER. Excitonic effects at the temperature-dependent direct bandgap of Ge. \textit{Journal of Applied Physics}. American Institute of Physics, 2022, vol.~131, No~16, p.~1-10. ISSN~0021-8979. Available from: https://dx.doi.org/10.1063/5.0080158.

Detailed Information on Publication Record