Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures

HUMLÍČEK, Josef, Luděk BOČÁNEK, Karel NAVRÁTIL, Petr PÁNEK and Radoslav ŠVEHLA. Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures. Solid State Communications. UK: Elsevier Science, 1995, 93(1995), No 9, p. 725-728. ISSN 0038-1098.

Basic information

Original name

Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures

Authors

HUMLÍČEK, Josef, Luděk BOČÁNEK, Karel NAVRÁTIL, Petr PÁNEK and Radoslav ŠVEHLA

Edition

Solid State Communications, UK, Elsevier Science, 1995, 0038-1098

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Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United Kingdom of Great Britain and Northern Ireland

Confidentiality degree

není předmětem státního či obchodního tajemství

RIV identification code

RIV/00216224:14310/95:00000342

Organization unit

Faculty of Science

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Links

MSM 143100002, plan (intention)

Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures